XP132A1545SR
■ELECTRICAL
CHARACTERISTICS
DC Characteristics
PARAMETER
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Drain-Source On-State Resistance *
Forward Transfer Admittance *
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
| Yfs |
Vf
CONDITIONS
Vds=-30V, Vgs=0V
Vgs=±20V, Vds=0V
Id=-1mA, Vds=-10V
Id=-4A, Vgs=-10V
Id=-4A, Vgs=-4.5V
Id=-4A, Vds=-10V
If=-8A, Vgs=0V
MIN.
-
-
-1.0
-
-
-
-
TYP.
-
-
-
0.025
0.038
11
-0.85
MAX.
-10
±1
-2.5
0.030
0.045
-
-1.1
T
a = 25℃
UNITS
μA
μA
V
Ω
Ω
S
V
* Effective during pulse test.
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
Vds=-10V, Vgs=0V
f=1MHz
CONDITIONS
MIN.
-
-
-
TYP.
1500
1000
500
MAX.
-
-
-
T
a = 25℃
UNITS
pF
pF
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
Vgs=-5V, Id=-4A
Vdd=-10V
CONDITIONS
MIN.
-
-
-
-
TYP.
20
45
40
35
MAX.
-
-
-
-
T
a = 25℃
UNITS
ns
ns
ns
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN.
-
TYP.
50
MAX.
-
UNITS
℃/W
2/5
TOREX [ TOREX SEMICONDUCTOR ]
