XP132A01A0SR
■Typical Performance Characteristics
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
-15
-10V
-5V
Pulse Test, Ta=25:
-4.5V
-4V
-15
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Pulse Test
Drain Current:Id (A)
-10
-3.5V
Drain Current:Id (A)
-10
-5
-3V
Vgs＝−2.5V
-5
Topr＝25 ℃
0
0
-1
-2
-3
-4
-5
125 ℃
0
0
-1
-2
-55 ℃
-3
-4
-5
Drain-Source Voltage:Vds (V)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
0.20
Pulse Test, Ta=25:
1.00
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse Test, Ta=25:
Drain-Source On-State Resistance
:Rds (on) (Ω)
0.15
Id＝-3A
-5A
Drain-Source On-State Resistance
:Rds (on) (Ω)
Vgs＝-5V
0.10
-10V
0.10
0.05
0.00
0
-2
-4
-6
-8
-10
0.01
0
-5
-10
-15
-20
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
Gate-Source Cut-Off Voltage Variance
:Vgs (off) Variance (V)
0.20
Pulse Test
1.0
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
Vds=-10V, Id=-1mA
11
Drain-Source On-State Resistance
:Rds (on) (Ω)
0.15
Id＝-5A
Vgs＝-5V
0.10
-3A
-3A,-5A
0.05
-10V
0.5
0.0
-0.5
0.00
-60
-30
0
30
60
90
120
150
-1.0
-60
-30
0
30
60
90
120
150
Ambient Temp.:Topr (:)
Ambient Temp.:Topr (:)
749
TOREX [ TOREX SEMICONDUCTOR ]
