XP131A0526SR
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
10000
Vgs=0V, f=1MHz
1000
SWITCHING TIME vs. DRAIN CURRENT
Vgs=5V, Vdd≒10V, PW=10µsec. duty≤1%
Switching Time:t (ns)
Capacitance:C (pF)
tf
Ciss
1000
Coss
100
td(off)
Crss
tr
td(on)
100
0
5
10
15
20
25
30
10
0.1
1
10
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
10
Vds=10V, Id=10A
30
25
20
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test
Gate-Source Voltage:Vgs (V)
8
6
Reverse Drain Current:Id (A)
Vgs＝4.5V
15
10
5
0
0,-4.5V
4
2
0
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1
Gate Charge:Qg (nc)
Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Standardized Transition Thermal Resistance:γs(t)
10
Rth (ch-a)=50˚C/W, (Implemented on a glass epoxy PCB)
11
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (sec)
726
TOREX [ TOREX SEMICONDUCTOR ]
