XP131A1520SR
■
Electrical Characteristics
Capacitance vs. Drain/Source Voltage
1
0000
Vgs=0V, f=1MHz, Ta=25℃
Power MOSFET
Switching Time vs. Drain Current
1000
Vgs=5V, Vdd≒10V, PW=10μs, duty≦1%, Ta=25℃
Capacitance:C (pF)
Ciss
Switching Time:t (ns)
tf
1000
Coss
100
td(off)
tr
td(on)
Crss
100
0
5
10
15
20
25
30
10
0
5
10
15
20
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
10
Vds=10V, Id=10A, Ta=25℃
40
Reverse Drain Current vs. Source/Drain Voltage
Pulse Test, Ta=25℃
Gate/Source Voltage:Vgs (V)
35
Reverse Drain Current:Idr (A)
8
30
25
20
15
10
5
0
0
10
20
30
40
50
0
0
0.2
0.4
0.6
0.8
1
Vgs=-4.5V, 0V
4.5V
u
6
4
2
Gate Charge:Qg (nc)
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Stanardized Transition Thermal Resistance:γs(t)
10
Rth (ch-a) = 50 OC/W ( Implemented on a glass epoxy PCB )
1
Single Pulse
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (s)
364
TOREX [ TOREX SEMICONDUCTOR ]
