XP131A1617SR
ETR1105_001
Power MOSFET
■GENERAL DESCRIPTION
The XP131A1617SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy
The small SOP-8 package makes high density mounting possible.
■FEATURES
■APPLICATIONS
●Notebook PCs
Low On-State Resistance: Rds(on)=0.014Ω(Vgs=4.5V)
:
Rds(on)=0.019Ω(Vgs=2.5V)
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
Ultra High-Speed Switching
Driving Voltage
: 2.5V
N-Channel Power MOSFET
DMOS Structure
Package
: SOP-8
■PIN CONFIGURATION
■PIN ASSIGNMENT
PIN NUMBER
PIN NAME
FUNCTION
Source
Gate
1~3
4
S
G
D
5~8
Drain
■
ABSOLUTE MAXIMUM RATINGS
■EQUIVALENT CIRCUIT
Ta = 25℃
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
20
±12
10
V
V
A
Idp
40
A
Idr
10
A
Channel Power Dissipation *
Channel Temperature
Pd
2.5
W
℃
℃
Tch
Tstg
150
-55~150
Storage Temperature Range
* When implemented on a glass epoxy PCB
1/5