XP131A1617SR
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
10000
Vgs=0V, f=1MHz, Ta=25℃
SWITCHING TIME vs. DRAIN CURRENT
1000
Vgs=5V, Vdd≒10V, PW=10μs, duty≤1%, Ta=25℃
Switching Time:t (ns)
Capacitance:C (pF)
Ciss
Coss
Crss
tf
100
td(off)
tr
1000
10
td(on)
100
0
5
10
15
20
1
0
5
10
15
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
10
Vds=10V, Id=10A, Ta=25℃
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
40
Reverse Drain Current:Idr (A)
35
30
25
20
15
10
5
Vgs=-4.5V, 0V
4.5V
Pulse Test, Ta=25℃
Gate-Source Voltage:Vgs (V)
8
6
2.5V
4
2
0
0
20
40
60
80
0
0
0.2
0.4
0.6
0.8
1
Gate Charge:Qg (nc)
Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Standardized Transition Thermal Resistance:γs(t)
11
10
Rth (ch-a) = 50 ℃/W ( Implemented on a glass epoxy PCB )
1
Single Pulse
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (s)
710
TOREX [ TOREX SEMICONDUCTOR ]
