XC6371
Series
XC6371F501PR
PARAMETER
Output Voltage
V
OUT
=5.0V,F
OSC
=100kH
Z
SYMBOL
V
OUT
V
IN
V
ST
1
V
ST
2
I
DD
1
I
DD
2
R
EXTH
R
EXTL
F
OSC
MAXDTY
EFFI
T
SS
4.0
External Components Connected. I
OUT
=1mA.
No external components.
Appply voltage to V
OUT
.
Same as V
ST
2.
Apply output voltage✕0.95 to V
OUT
.
Same as V
ST
2.
Apply output voltage✕1.1 to V
OUT
.
Same as I
DD
1. V
EXT
=–0.4V.
Same as I
DD
1. V
EXT
=0.4V.
Same as I
DD
1.Measuring of EXT waveform.
Same as I
DD
1.Measuring of EXT waveform.
85
85
40.0
8.2
37.5
30
100
87
85
10.0
20.0
CONDITIONS
MIN
4.875
10
0.90
0.80
66.8
16.5
62.5
50
115
92
TYP
5.000
MAX
5.125
Ta=25°C
UNITS
V
V
V
V
µA
µA
Ω
Ω
kHz
%
%
ms
Maximum Input Voltage
Operation Start-up Voltage
Oscillation Start-up Voltage
Supply Current 1
Supply Current 2
EXT "High" On-Resistance
EXT "Low" On-Resistance
Oscillator Frequency
Maximum Duty Ratio
Efficiency
Slow-Start Time
4
Measuring conditions: Unless otherwise specified, connect V
DD
to V
OUT,
V
IN
=V
OUT
✕
0.6, I
OUT
=50mA. See Typical Application Circuits, Fig.6.
Note: When the V
DD
and V
OUT
pins are independently used, the voltage range at the V
DD
pin should be 2.2V to 10V.
The IC operates from V
DD
=0.8V. However, output voltage and oscillator frequency are properly stabilized when V
DD
=2.2V or higher.
■Typical Application Circuits
SD
V
OUT
L
L
SD
V
OUT
V
IN
C
IN
SOT-89
(TOP VIEW)
V
IN
C
IN
Tr
SOT-89
(TOP VIEW)
C
L
（Tantalum）
3
C
B
R
B
1
C
L
（Tantalum）
1
2
2
3
GND
GND
L
SD
C
L
C
IN
: 100µH (SUMIDA, CR-54)
: MA2Q735 (Schottky diode; MATSUSHITA)
: 16V 47µF (Tantalum capacitor; NICHCON, MCE)
: 16V220µF (Alminium Electrolytic Capacitor)
L : 47µH (SUMIDA, CR-54)
SD : MA2Q735 (Schottky diode; MATSUSHITA)
C
L
: 16V 47µF (Tantalum capacitor; NICHCON MCE)
C
IN
: 16V220µF (Alminium Electrolytic Capacitor)
R
B
: 1kΩ, C
B
:3300pF (F
OSC
=100kHz)
Tr : 2SC3279, 2SD1628G
Fig.1 XC6371A Application
Fig.2 XC6371B Application
445
TOREX [ TOREX SEMICONDUCTOR ]
