XC6367/6368 Series
■TEST CIRCUITS (Continued)
●External Components
Tr
: XP161A1355PR (N-ch Power MOSFET, TOREX)
As the breakdown voltage of XP161A1355PR is 8V, take care
with the power supply voltage. With output voltages over 6V,
use the XP161A1265PR with a breakdown voltage of 12V.
VST1 : XP161A1355PR = 1.2V (MAX.)
XP161A1265PR = 1.5V (MAX.)
: 22μH (CR54, SUMIDA FOSC=300kHz)
L
47μH (CR75, SUMIDA FOSC=100, 180kHz)
10μH (CR54, SUMIDA FOSC=500kHz)
: MA2Q735 (Schottky Diode, SUMIDA MATSUSHITA)
: 16V, 220μF (Aluminium Electrolytic Capacitor)
: 16V, 47μF + 47μF (Tantalum capacitor, NICHICON MCE)
SD
CIN
CL
NPN Tr type:
Tr
Rb
Cb
: 2SD1628 (SANYO)
: 500Ω(Adjust according to load and Tr. hFE levels)
: 2200pF (Ceramic Type)
Set up so that CB < 1÷(2πx RB x FOSC x 0.7)
C, D, F type (soft-start externally set-up):
CSS
RSS
: 0.1μF (Ceramic Capacitor)
: 470kΩ(C, F Type), 220kΩ(D Type)
B, D type (FB versions)
RFB
CFB
: Set up so that RFB1÷RFB2 = VOUT - 1 (VOUT = setting output voltage),
Please use with RFB1 + RFB2 ≦2MΩ
: Set up so that fzfb = 1÷(2 xπx CFB x RFB1) is within the
0.1 to 20kHz range (10kHz conventional)
Adjustments necessary in respect of L, CL.
VOUT = 3.0V
e.g
RFB1 = 400kΩ, RFB2 = 200kΩ, CFB = 47pF
For using MOSFET, We recommend using TOREX MOSFETs, which has a gate protection diode built-in.
GATE PROTECTION DIODE BUILT-IN MOSFET
XP161A1355PR
Rds (ON)
0.15Ω@ Vgs=1.5V
0.095Ω@ Vgs=2.5V
XP161A1265PR
568
TOREX [ Torex Semiconductor ]
