04S_02XC6367/68 02.09.12 14:41 ページ 423
XC6367/6368
Series
Recommended Components
Tr
: XP161A1355PR (Torex N-channel Power MOSꢁET%
As the breakdown voltage of XP161A1355PR is 8V, take care
with the power supply voltage. With output voltages over 6V,
use the XP161A1±65PR with a breakdown voltage of 1±V.
V
ST1
: XP161A1355PR = 1.±V (max%
XP161A1±65PR = 1.5V (max%
L
: ±±µH (Sumida CR54, ꢁOSC=300kHz%
47µH (Sumida CR75, ꢁOSC=100, 180kHz%
10µH (Sumida CR54, ꢁOSC=500kHz%
SD : MA±Q735 (Schottky Diode, Matsushita%
C
C
IN : 16V ±±0µꢁ (Aluminium Electrolytic Capacitor%
L
: 16V 47µꢁ + 47µꢁ (Tantalum capacitor, Nichicon MCE%
NPN Tr type :
Tr
: ±SD16±8 (Sanyo%
Rb
Cb
: 500Ω (Adjust according to load and Tr. hꢁE levels%
: ±±00pꢁ (Ceramic type%
4
Set up so that C
F
≤ 1 ÷ (±π x RF x ꢁOSC x 0.7%
C, D, F type (soft-start externally set-up% :
C
R
SS : 0.1µꢁ (Ceramic capacitor%
SS : 470kΩ (C, ꢁ type%, ±±0kΩ (D type%
B, D type (FB versions%
R
ꢁF : Set up so that RꢁF1 ÷ RꢁF± = VOUT - 1 (VOUT = set-up output voltage%,
Please use with RꢁF1 + RꢁF± ≤ ±MΩ
C
ꢁF : Set up so that fzfb = 1÷ (± x π x CꢁF x RꢁF1% is within the
0.1 to ±0kHz range (10kHz conventional%
Adjustments necessary in respect of L, CL.
e.g
V
R
OUT = 3.0V
ꢁF1 = 400kΩ, RꢁF± = ±00kΩ, CꢁF = 47pꢁ
If using a Torex MOSꢁET, We recommend using one which has a gate protection diode built-in.
Gate Protection Diode Fuilt-in
XP161A1355PR
R
ds(ON%
ds(ON%
0.15Ω@Vgs=1.5V
XP161A1±65PR
0.095Ω@Vgs=±.5V
R
423
TOREX [ Torex Semiconductor ]
