XC6367/6368
Series
Recommended Components
Tr
: XP161A1355PR (Torex N-channel Power MOSFET)
As the breakdown voltage of XP161A1355PR is 8V, take care
with the power supply voltage. With output voltages over 6V,
use the XP161A1265PR with a breakdown voltage of 12V.
V
ST
1 : XP161A1355PR = 1.2V (max)
XP161A1265PR = 1.5V (max)
: 22µH (Sumida CR54, F
OSC
=300kHz)
47µH (Sumida CR75, F
OSC
=100, 180kHz)
10µH (Sumida CR54, F
OSC
=500kHz)
: MA2Q735 (Schottky Diode, Matsushita)
: 16V 220µF (Aluminium Electrolytic Capacitor)
: 16V 47µF + 47µF (Tantalum capacitor, Nichicon MCE)
L
SD
C
IN
C
L
NPN Tr type :
Tr
Rb
Cb
: 2SD1628 (Sanyo)
: 500Ω (Adjust according to load and Tr. hFE levels)
: 2200pF (Ceramic type)
Set up so that C
B
≤
1
÷
(2π x R
B
x F
OSC
x 0.7)
4
C, D, F type (soft-start externally set-up) :
C
SS
: 0.1µF (Ceramic capacitor)
R
SS
: 470kΩ (C, F type), 220kΩ (D type)
B, D type (FB versions)
R
FB
: Set up so that R
FB
1
÷
R
FB
2 = V
OUT
- 1 (V
OUT
= set-up output voltage),
Please use with R
FB
1 + R
FB
2
≤
2MΩ
C
FB
: Set up so that fzfb = 1÷ (2 x
π
x C
FB
x R
FB
1) is within the
0.1 to 20kHz range (10kHz conventional)
Adjustments necessary in respect of L, C
L
.
e.g
V
OUT
= 3.0V
R
FB
1 = 400kΩ, R
FB
2 = 200kΩ, C
FB
= 47pF
If using a Torex MOSFET, We recommend using one which has a gate protection diode built-in.
R
ds
(ON)
R
ds
(ON)
Gate Protection Diode Built-in
XP161A1355PR
0.15Ω@V
gs
=1.5V
XP161A1265PR
0.095Ω@V
gs
=2.5V
423
TOREX [ TOREX SEMICONDUCTOR ]
