XC61C
Series
■Electrical Characteristics
V
DF
(T) = 0.9 to 1.5V
±
2%
Ta = 25
O
C
PARAMETER
Detect Voltage
Hysteresis Range
SYMBOL
V
DF
V
HYS
CONDITIONS
MIN
V
DF
x 0.98
TYP
V
DF
V
DF
x 0.05
MAX
V
DF
x 1.02
UNITS
V
V
CIRCUIT
1
1
V
DF
x 0.02
V
DF
x 0.08
Supply Current
I
SS
Operating Voltage
V
IN
N-ch
V
IN
= 1.5V
=2.0V
=3.0V
=4.0V
=5.0V
V
DF
(T) = 0.9V to 1.5V
V
DS
=0.5V
V
IN
=0.7V
=1.0V
V
DS
=2.1V
V
IN
=6.0V
( with CMOS output )
-40
O
C
≤
Topr
≤
85
O
C
0.7
0.8
0.9
1.0
1.1
0.7
0.1
0.85
0.8
2.7
-7.5
±
100
2.3
2.7
3.0
3.2
3.6
6.0
µA
2
2
V
1
3
Output Current
I
OUT
mA
-1.5
ppm/°C
0.2
ms
4
-
5
P-ch
Temperature Characteristics
Delay Time
(V
DR
V
OUT
inversion)
∆
V
DF
∆
Topr
•
V
DF
tDLY
Note :
V
DF
(T) : Established Detect Voltage Value
Release Voltage : V
DR
= V
DF
+ V
HYS
137
TOREX [ TOREX SEMICONDUCTOR ]
