XC2164
Series
■ELECTRICAL
CHARACTERISTICS (Continued)
XC2164A51T, V / XC2164K51T, V (Fundamental)
3.3V operation (unless otherwise stated, V
DD
=3.3V, No Load, Ta=-30~+80℃)
PARAMETER
Operating Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
Supply Current 1
SYMBOL
V
DD
V
IH
V
IL
V
OH
V
OL
I
DD
1
CONDITIONS
CMOS: 2.97V, I
OH
=-8mA
CMOS: 2.97V, I
OH
=8mA
/I
NH
=Open,
Q
0
=Open,
f=30MHz
XC2164A51T
XC2164A51V
XC2164K51T
XC2164K51V
XC2164A51T
/I
NH
="L",
XC2164A51V
Q0=Open,
XC2164K51T
f=30MHz
XC2164K51V
/I
NH
="L"
/I
NH
=0.7 V
DD
Supply Current 2
I
DD
2
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
Feedback Resistance
Output Disable
Leakage Current
* T.B.D.: To be determined
Rup1
Rup2
Rf
I
OZ
MIN.
2.50
2.4
-
2.5
-
-
-
-
-
-
-
-
-
1.0
35
-
TYP.
3.30
-
-
-
-
4
5
4
5
2
2
MAX.
3.63
-
0.4
-
0.4
(6.5)
(8)
(6.5)
(8)
(4)
(4)
UNITS
V
V
V
V
V
mA
μA
mA
MΩ
kΩ
MΩ
μA
(T.B.D.*) (T.B.D.*)
(T.B.D.*) (T.B.D.*)
2.0
4.0
70
140
7.0
-
-
10
/I
NH
="L"
-
Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value
SYMBOL
M
V
T
OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE
V
DD
=3.3V±10%
V
DD
=5.0V±10%
±
4.3ppm
±
4.5ppm
±
1.2ppm
±
2.1ppm
±
9.4ppm
±
7.0ppm
NEGATIVE RESISTANCE VALUE
V
DD
=3.3V
V
DD
=5.0V
-130Ω
-220Ω
-150Ω
-250Ω
-660Ω
-760Ω
(The designed value when 30MHz crystal is used.)
1688
TOREX [ TOREX SEMICONDUCTOR ]
