ICs for use with Crystal Oscillators
XC2164 Series
ꢁ ELECTRICAL CHARACTERISTICS (Continued)
XC2164A51T, V Fundamental
3.3V Operation (unless otherwise stated, VDD=3.3V, No Load, Ta=30 ~ + 80OC)
PARAMETER
SYMBOL
VDD
VIH
CONDITIONS
MIN.
2.5
TYP.
3.30
MAX.
3.63
UNITS
Operating Supply Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
V
V
V
V
V
2.4
VIL
0.4
VOH
VOL
CMOS : 2.97V, IOH= - 8mA
CMOS : 2.97V, IOH=8mA
2.5
0.4
( 8 )
( 6.5 )
( 4 )
( 4 )
4.0
/INH=Open, Q0=Open
XC2164A51M, V
XC2164A51T
5
4
Consumption Current 1
Consumption Current 2
IDD1
IDD2
mA
f=30MHz
/INH= " L ", Q0=Open
f=30MHz
XC2164A51M, V
XC2164A51T
2
µA
2
MΩ
kΩ
Input pull up resistance 1
Input pull up resistance 2
Rup1
Rup2
/INH="L"
/INH=0.7VDD
XC2164A51M, V
1.0
35
2.0
70
35
20
35
20
7.0
140
Cg
Cd
( * )
( * )
XC2164A51T
XC2164A51M, V
XC2164A51T
Internal Oscillation Capacitance
pF
MΩ
µA
Internal Oscillation Feedback Resistance
Output Diable Leakage Current
Rf
IOZ
/INH="L"
10
* note 1 : the values for Cg, Cd are the designed values.
Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value (The designed value when 300MHz Crystal is used.)
OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE
NEGATIVE RESISTANCE VALUE
SYMBOL
VDD = 3.3 V, ±10%
± 4.3 ppm
VDD = 5.0 V, ±10%
± 4.5 ppm
VDD = 3.3V
- 130 Ω
VDD = 5.0V
- 220 Ω
M
V
T
± 1.2 ppm
± 2.1 ppm
- 150 Ω
- 250 Ω
± 9.4 ppm
± 7.0 ppm
- 660 Ω
- 760 Ω
Semiconductor Ltd.
5
TOREX [ Torex Semiconductor ]
