XC2164
Series
■
ELECTRICAL CHARACTERISTICS (Continued)
●DC
Electrical Characteristics (Continued)
XC2164Ax1T, V / XC2164Kx1T, V (Fundamental)
3.3V operation (unless otherwise stated, V
DD
=3.3V, No Load, Ta= -30~+80℃)
PARAMETER
Operating Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
SYMBOL
V
DD
V
IH
V
IL
V
OH
V
OL
CONDITIONS
MIN.
2.50
2.4
-
2.5
-
-
-
-
-
-
-
-
-
1.0
35
-
TYP.
3.30
-
-
-
-
4
5
4
5
2
2
MAX.
3.63
-
0.4
-
0.4
(6.5)
(8)
(6.5)
(8)
(4)
(4)
UNITS
V
V
V
V
V
CMOS: 2.97V, I
OH
= - 8mA
CMOS: 2.97V, I
OH
=8mA
/INH=Open,
Q
0
=Open,
f=30MHz
XC2164Ax1T
XC2164Ax1V
XC2164Kx1T
XC2164Kx1V
XC2164Ax1T
/INH="L",
XC2164Ax1V
Q
0
=Open,
XC2164Kx1T
f=30MHz
XC2164Kx1V
/INH="L"
/INH=0.7 V
DD
Supply Current 1
I
DD1
mA
μA
mA
MΩ
kΩ
MΩ
μA
Supply Current 2
I
DD2
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
Feedback Resistance
Output Disable
Leakage Current
* T.B.D.: To be determined
R
UP1
R
UP2
Rf
I
OZ
(T.B.D.*) (T.B.D.*)
(T.B.D.*) (T.B.D.*)
2.0
4.0
70
140
7.0
-
-
10
/INH="L"
-
Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value
SYMBOL
M
V
T
OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE
V
DD
=3.3V±10%
±
4.3ppm
±
1.2ppm
±
9.4ppm
NEGATIVE RESISTANCE VALUE
V
DD
=3.3V
- 130Ω
- 150Ω
- 660Ω
V
DD
=5.0V
- 220Ω
- 250Ω
- 760Ω
V
DD
=5.0V±10%
±
4.5ppm
±
2.1ppm
±
7.0ppm
(The designed value when 30MHz crystal is used.)
5/12
TOREX [ TOREX SEMICONDUCTOR ]
