XC2164
Series
■ELECTRICAL CHARACTERISTICS (Continued)
●DC Electrical Characteristics (Continued)
XC2164Ax1T, V / XC2164Kx1T, V (Fundamental)
3.3V operation (unless otherwise stated, VDD=3.3V, No Load, Ta= -30~+80℃)
PARAMETER
SYMBOL
VDD
CONDITIONS
MIN.
TYP.
MAX. UNITS
Operating Voltage
2.50
3.30
3.63
-
V
V
V
V
V
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
VIH
2.4
-
-
VIL
-
0.4
-
VOH
CMOS: 2.97V, IOH= - 8mA
CMOS: 2.97V, IOH=8mA
XC2164Ax1T
2.5
-
VOL
-
-
0.4
(6.5)
(8)
(6.5)
(8)
(4)
(4)
-
4
5
4
5
2
2
/INH=Open,
-
XC2164Ax1V
XC2164Kx1T
XC2164Kx1V
XC2164Ax1T
XC2164Ax1V
XC2164Kx1T
XC2164Kx1V
Supply Current 1
Supply Current 2
IDD1
Q0=Open,
f=30MHz
mA
-
-
-
μA
/INH="L",
Q0=Open,
f=30MHz
-
IDD2
-
(T.B.D.*) (T.B.D.*)
(T.B.D.*) (T.B.D.*)
mA
-
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
RUP1
RUP2
/INH="L"
1.0
35
2.0
70
4.0
MΩ
kΩ
/INH=0.7 VDD
140
Rf
-
-
7.0
-
-
MΩ
μA
Feedback Resistance
Output Disable
IOZ
/INH="L"
10
Leakage Current
* T.B.D.: To be determined
Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value
OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE
NEGATIVE RESISTANCE VALUE
SYMBOL
VDD=3.3V±10%
±4.3ppm
VDD=5.0V±10%
±4.5ppm
VDD=3.3V
- 130Ω
- 150Ω
- 660Ω
VDD=5.0V
- 220Ω
- 250Ω
- 760Ω
M
V
T
±1.2ppm
±2.1ppm
±9.4ppm
±7.0ppm
(The designed value when 30MHz crystal is used.)
5/12
TOREX [ Torex Semiconductor ]
