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XBS104V14R 参数 Datasheet PDF下载

XBS104V14R图片预览
型号: XBS104V14R
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基势垒二极管, 1A , 40V型 [Schottky Barrier Diode, 1A, 40V Type]
分类和应用: 二极管
文件页数/大小: 3 页 / 73 K
品牌: TOREX [ TOREX SEMICONDUCTOR ]
 浏览型号XBS104V14R的Datasheet PDF文件第2页浏览型号XBS104V14R的Datasheet PDF文件第3页  
XBS104V14
Schottky Barrier Diode, 1A, 40V Type
ETR1610-001
■FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
: V
F
=0.365V (TYP.)
: I
F(AV)
=1A
: V
RM
=40V
■APPLICATIONS
●Rectification
●Protection
against reverse connection of battery
■ABSOLUTE
MAXIMUM RATINGS
Ta=25℃
PARAMETER
Repetitive Peak Reverse Voltage
Reverse Voltage (DC)
Forward Current (Average)
Non Continuous
Forward Surge Current
Junction Temperature
Storage Temperature Range
*1
■PACKAGING
INFORMATION
SYMBOL
V
RM
V
R
I
F(AV)
I
FSM
Tj
Tstg
RATINGS
40
40
1
20
125
-55∼+150
UNIT
V
V
A
A
*1: Non continuous high amplitude 60Hz half-sine wave.
* When the IC is operated continuously under high load conditions such as high temperature,
high current and high voltage, it may have the case that reliability reduces drastically even if
under the absolute maximum ratings. Adequate “Derating” should be taken into
consideration while designing.
Cathode Bar
■MARKING
RULE
①:
0 (Product Number)
②:
Assembly Lot Number
SOD-123A
Unit : mm
■PRODUCT
NAME
PRODUCT NAME
XBS104V14□
*
DEVICE ORIENTATION
R
: Embossed tape, standard feed
*
Please put the device orientation type “R”.
■ELECTRICAL
CHARACTERISTICS
PARAMETER
SYMBOL
V
F1
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time
*2
Ta=25℃
LIMITS
MIN.
-
-
-
-
-
-
TYP.
0.23
0.30
0.365
0.25
150
41
MAX.
0.315
0.385
0.41
2
-
-
UNIT
V
V
V
mA
pF
ns
TEST CONDITIONS
I
F
=100mA
I
F
=500mA
I
F
=1A
V
R
=40V
V
R
=1V , f=1MHz
I
F
=I
R
=10mA , irr=1mA
V
F2
V
F3
I
R
Ct
trr
*2:trr measurement circuit
Bias
Pulse Generatrix
Device Under test
Oscilloscope
1/3