PIN DIODE
NHigh
Power Handling
NSmall
Capacitance at Zero Bias, Extremely
Small Reverse Bias
NSmall
Series Order Resistance
NSmall
Insertion Loss, High Isolation
NExtremely
Small Wave Distortion
(TX sprious <-80dBc, RX intermodulation =
-73dBc @ 90dB
µ)
■Applications
GHigh
Power Antenna Switch
(10W output two-way radio)
■General Description
The XB15A308 PIN diode employs a high reliability glass package that is
designed for solid state antenna switches used in commercial two-way
radios.
■Dimensions
MAX 4.4
MAX 4.2
Unit: mm
MAX 2.1
MIN 26
MIN 26
JEDEC DO-35
■Absolute Maximum Ratings
SYMBOL
V
RM
V
R
I
FSM
*
P
Tj
Tstg
* t = 5sec
TYP 0.6
Ta=25
O
C
RATINGS
50
50
2
500
175
-55 ~ 175
UNITS
V
V
A
mW
O
O
PARAMETER
Repetitive Peak Reverse Voltage
Reverse Voltage
Forward Surge Current
Power Dissipation
Junction Temperature
Storage Temperature
C
C
■Electrical Characteristics
SYMBOL
I
R1
I
R2
I
F
Ct
r
fs
R
P
PARAMETER
Reverse Current
Forward Current
Diode Capacitance
Forward Series Resistance
Parallel Resistance
TEST CONDITIONS
MIN
V
R
= 50V
V
R
= 45V
V
F
= 1.0V
V
R
= 0V, f = 100MHz
I
F
= 50mA, f = 470MHz
V
R
= 0V, f = 100MHz
1.0
100
1.3
0.65
6.0
1.8
0.8
LIMITS
TYP
MAX
10
0.5
Ta=25
O
C
UNITS
µA
µA
mA
pF
Ω
kΩ
15
1057
TOREX [ TOREX SEMICONDUCTOR ]
