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XB01SB04A2BR 参数 Datasheet PDF下载

XB01SB04A2BR图片预览
型号: XB01SB04A2BR
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基二极管1A , 40V型 [Schottky Barrier Diode 1A, 40V Type]
分类和应用: 肖特基二极管
文件页数/大小: 4 页 / 113 K
品牌: TOREX [ TOREX SEMICONDUCTOR ]
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XB01SB04A2BR
Schottky Barrier Diode 1A, 40V Type
ETR1601_001
■GENERAL
DESCRIPTION
XB01SB04A2BR employs 1A level of a schottky diode in a small package equivalent to SOD-123 package. It is suitable for
compact, low profile circuit designs. By giving the series low VF and low IR characteristics, it minimizes power supply loss.
■APPLICATIONS
●Rectification
of compact DC/DC converter
●Surge
absorption caused by counter force of
compact motors
●Energy-saving
for notebook PCs, hand-set
●Protection
against reverse connection of
battery
■FEATURES
1A, 40V Type
Low VF 0.49V @1A (TYP.)
Low IR 4μA @40V (TYP.)
Small Package
: SOD-123
■ABSOLUTE
MAXIMUM RATINGS
PARAMETER
Repetitive Peak Reverse Voltage
Reverse Voltage (DC)
Forward Current (Average)
Non Continuous Forward Surge Current*1
Junction Temperature
Storage Temperature Range
*1: Non continuous high amplitude 60Hz half-sine wave.
SYMBOL
V
RM
V
R
I
F(AV)
I
FSM
Tj
Tstg
RATINGS
40
40
1
10
125
-55~+150
Ta = 25℃
UNIT
V
V
A
A
■ELECTRICAL
CHARACTERISTICS
PARAMETER
Forward Voltage (DC)
Reverse Current (DC)
Inter-Terminal Capacity
Reverse Recovery Current *2
SYMBOL
VF
IR
Ct
trr
TEST CONDITIONS
IF=1A
VR=40V
VR=10V, f=1MHz
IF=IR=10mA, irr=1mA, RL=100Ω
LIMITS
MIN.
TYP.
0.49
4
35
25
MAX.
0.54
200
Ta=25℃
UNITS
V
μA
pF
ns
Note) 1.This product has a weakness for an electroshock such as electrostatic.
Please be careful of an electrification to human body and an electric leakage in the application.
2. *2: trr measurement circuit
Bias
IF
trr
t
0
A
irr
IR
Pulse Generatrix
Oscilloscope
1/4