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0790_XP162A01B5PR 参数 Datasheet PDF下载

0790_XP162A01B5PR图片预览
型号: 0790_XP162A01B5PR
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS FET [Power MOS FET]
分类和应用:
文件页数/大小: 4 页 / 164 K
品牌: TOREX [ Torex Semiconductor ]
 浏览型号0790_XP162A01B5PR的Datasheet PDF文件第1页浏览型号0790_XP162A01B5PR的Datasheet PDF文件第2页浏览型号0790_XP162A01B5PR的Datasheet PDF文件第4页  
11S_46XP162A01B5PR 02.9.12 4:19 PM ページ 872  
XP162A01B5PR  
■Typical Performance Characteristics  
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE  
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE  
Pulse Test, Vds=-10V  
Pulse Test, Ta=25:  
-6  
-6  
-5  
-4  
-3  
-2  
Topr=25℃�  
-5V  
-4.5V  
-3V  
-5  
-4  
-3  
-2  
-1  
0
-4V  
-3.5V  
-2.5V  
125℃�  
-55℃�  
-2V  
Vgs=-1.5V  
-2  
-1  
0
0
-1  
-2  
-3  
-4  
-5  
0
-1  
-3  
Drain-Source Voltage:Vds (V)  
Gate-Source Voltage:Vgs (V)  
DRAIN-SOURCE ON-STATE RESISTANCE  
vs. GATE-SOURCE VOLTAGE  
Pulse Test, Ta=25:  
DRAIN-SOURCE ON-STATE RESISTANCE  
vs. DRAIN CURRENT  
Pulse Test, Ta=25:  
0.5  
10  
0.4  
0.3  
0.2  
0.1  
0
Id=-1A  
-2A  
1
Vgs=-2.5V  
-4.5V  
0.1  
0
-2  
-4  
-6  
-8  
-10  
0
-1  
-2  
-3  
-4  
-5  
-6  
Gate-Source Voltage:Vgs (V)  
Drain Current:Id (A)  
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE  
vs. AMBIENT TEMPERATURE  
Vds=-10V, Id=-1mA  
DRAIN-SOURCE ON-STATE RESISTANCE  
vs. AMBIENT TEMPERATURE  
Pulse Test  
11  
1
0.8  
0.6  
0.4  
0.2  
0
0.6  
0.4  
0.2  
0.0  
-0.2  
Id=-2A  
Vgs=-2.5V  
-1A  
-0.4  
-0.6  
-1A,-2A  
-4.5V  
-60  
-30  
0
30  
60  
90  
120  
150  
-60  
-30  
0
30  
60  
90  
120  
150  
Ambient Temp.:Topr (:)  
Ambient Temp.:Topr (:)  
872