Power MOS FET
NP-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance: 0.48Ω (max)
NUltra
High-Speed Switching
NSOT-23
Package
■Applications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
■General Description
The XP152A01D8MR is a P-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-23 package makes high density mounting possible.
■Features
Low on-state resistance
: Rds(on)=0.48Ω(Vgs=-4.5V)
: Rds(on)=0.80Ω(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage
: -2.5V
High density mounting
: SOT-23
■Pin Configuration
D
3
■Pin Assignment
PIN NUMBER
PIN NAME
Ｇ
Ｓ
Ｄ
FUNCTION
1
2
1
G
2
S
Gate
Source
Drain
3
11
SOT-23
（TOP VIEW）
■Equivalent Circuit
3
■Absolute Maximum Ratings
Ta=25:
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
-20
±12
-0.5
-1.5
-0.5
0.5
150
-55~150
UNITS
V
V
A
A
A
W
:
:
1
2
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
P-Channel MOS FET
(1 device built-in)
Note: When implemented on a ceramic PCB
834
TOREX [ TOREX SEMICONDUCTOR ]
