tm
TE
CH
T14L256A
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage to Vss Potential
Inputs to Vss Potential
Power Dissipation
Storage Temperature
RATING
-0.5 to + 4.6
-0.5 to Vcc +0.5
1.0
-60 to +150
UNIT
V
V
W
°
C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage
Input Voltage, low
Input Voltage, high
Ambient Temperature
SYM
Vcc
MIN
Typ-5%
-0.3
2.1
0
TYP
3.3
-
-
-
MAX
Typ+5%
0.8
Vcc+0.3
70
UNIT
V
V
V
°
C
V
IL
V
IH
T
A
TRUTH TABLE
CS
H
L
L
L
OE
X
H
L
X
WE
X
H
H
L
MODE
Not Selected
Output Disable
Read
Write
I/O1- I/O8
High-Z
High-Z
Data Out
Data In
Vcc
I
SB,
I
SB1
Icc
Icc
Icc
OPERATING CHARACTERISTICS
(Vcc = 3.3V
±
5%, Vss = 0V, Ta = 0 to 70
°
C)
PARAMETER
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
Standby Power
Supply Current
SYM.
I
LI
I
LO
TEST CONDITIONS
Vin=Vss to Vcc
V
I/O
=Vss to Vcc ,
OE
=
CS
=
V
IH
or
MIN.
-10
-10
-
2.4
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
MAX. UNIT
+10
uA
+10
uA
0.4
-
110
100
90
80
15
2
V
V
mA
mA
mA
mA
mA
mA
V
IH
or
WE
= V
IL
V
OL
V
OH
Icc
I
SB
I
SB1
8
10
Cycle = MIN.
12
Duty = 100%
15
CS
=
V
IH
, Cycle=MIN, Duty=100%
I
OL
= + 8.0mA
I
OH
= - 4.0mA
CS =
V
IL
, I/O=0mA
CS
≥
Vcc
-0.2V
Note:
Typical characteristics are at Vcc = 3.3V, Ta = 25
°
C
Taiwan Memory Technology, Inc. reserves the right
to change products or specifications without notice.
P. 2
Publication Date: APR. 2001
Revision: E
TMT [ TAIWAN MEMORY TECHNOLOGY ]
