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ULN2003AIPW 参数 Datasheet PDF下载

ULN2003AIPW图片预览
型号: ULN2003AIPW
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压,大电流达林顿晶体管阵列 [HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY]
分类和应用: 晶体晶体管达林顿晶体管
文件页数/大小: 14 页 / 299 K
品牌: TI [ TEXAS INSTRUMENTS ]
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ULN2003AI
HIGH-VOLTAGE, HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAY
SLRS054B – JULY 2003 – REVISED FEBRUARY 2005
Absolute Maximum Ratings
(1)
at 25°C free-air temperature (unless otherwise noted)
MIN
V
CC
V
I
I
OK
T
A
θ
JA
T
J
T
stg
(1)
(2)
(3)
(4)
Collector-emitter voltage
Clamp diode reverse voltage
(2)
Input voltage
(2)
Peak collector
current
(3) (4)
Output clamp current
Total emitter-terminal current
Operating free-air temperature range
D package
Package thermal impedance
(3) (4)
Operating virtual junction temperature
Storage temperature range
–65
N package
PW package
–40
MAX
50
50
30
500
500
–2.5
105
73
67
108
150
150
°C
°C
°C/W
UNIT
V
V
V
mA
mA
A
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.
Maximum power dissipation is a function of T
J
(max),
θ
JA
, and T
A
. The maximum allowable power dissipation at any allowable ambient
temperature is P
D
= (T
J
(max) – T
A
)/θ
JA
. Operating at the absolute maximum T
J
of 150°C can affect reliability.
The package thermal impedance is calculated in accordance with JESD 51-7.
Electrical Characteristics
T
A
= 25°C
PARAMETER
V
I(on)
On-state input voltage
TEST FIGURE
5
TEST CONDITIONS
I
C
= 200 mA
V
CE
= 2 V
I
I
= 250
µA,
V
CE(sat)
I
CEX
V
F
I
I(off)
I
I
I
R
C
i
Collector-emitter saturation voltage
Collector cutoff current
Clamp forward voltage
Off-state input current
Input current
Clamp reverse current
Input capacitance
4
1
7
2
3
6
I
I
= 350
µA,
I
I
= 500
µA,
V
CE
= 50 V,
I
F
= 350 mA
V
CE
= 50 V,
V
I
= 3.85 V
V
R
= 50 V
V
I
= 0,
f = 1 MHz
15
I
C
= 500
µA
50
I
C
= 250 mA
I
C
= 300 mA
I
C
= 100 mA
I
C
= 200 mA
I
C
= 350 mA
I
I
= 0
1.7
65
0.93
1.35
50
25
0.9
1
1.2
MIN
TYP
MAX
2.4
2.7
3
1.1
1.3
1.6
50
2
µA
V
µA
mA
µA
pF
V
V
UNIT
3