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ULN2003AIN 参数 Datasheet PDF下载

ULN2003AIN图片预览
型号: ULN2003AIN
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压,大电流达林顿晶体管阵列 [HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY]
分类和应用: 晶体晶体管达林顿晶体管
文件页数/大小: 14 页 / 299 K
品牌: TI [ TEXAS INSTRUMENTS ]
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ULN2003AI  
HIGH-VOLTAGE, HIGH-CURRENT  
DARLINGTON TRANSISTOR ARRAY  
www.ti.com  
SLRS054BJULY 2003REVISED FEBRUARY 2005  
Absolute Maximum Ratings(1)  
at 25°C free-air temperature (unless otherwise noted)  
MIN  
MAX  
50  
UNIT  
V
VCC  
Collector-emitter voltage  
Clamp diode reverse voltage(2)  
Input voltage(2)  
50  
V
VI  
30  
V
Peak collector current(3)(4)  
500  
500  
–2.5  
105  
73  
mA  
mA  
A
IOK  
Output clamp current  
Total emitter-terminal current  
Operating free-air temperature range  
TA  
–40  
–65  
°C  
D package  
N package  
PW package  
θJA  
Package thermal impedance(3)(4)  
67  
°C/W  
108  
150  
150  
TJ  
Operating virtual junction temperature  
Storage temperature range  
°C  
°C  
Tstg  
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating  
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.  
(3) Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient  
temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.  
(4) The package thermal impedance is calculated in accordance with JESD 51-7.  
Electrical Characteristics  
TA = 25°C  
PARAMETER  
TEST FIGURE  
TEST CONDITIONS  
MIN  
TYP  
MAX  
2.4  
2.7  
3
UNIT  
IC = 200 mA  
VI(on)  
On-state input voltage  
5
VCE = 2 V  
IC = 250 mA  
IC = 300 mA  
IC = 100 mA  
IC = 200 mA  
IC = 350 mA  
II = 0  
V
II = 250 µA,  
II = 350 µA,  
II = 500 µA,  
VCE = 50 V,  
IF = 350 mA  
VCE = 50 V,  
VI = 3.85 V  
VR = 50 V  
VI = 0,  
0.9  
1
1.1  
1.3  
1.6  
50  
VCE(sat)  
Collector-emitter saturation voltage  
4
V
1.2  
ICEX  
VF  
II(off)  
II  
Collector cutoff current  
Clamp forward voltage  
Off-state input current  
Input current  
1
7
2
3
6
µA  
V
1.7  
65  
2
IC = 500 µA  
50  
µA  
mA  
µA  
pF  
0.93  
1.35  
50  
IR  
Clamp reverse current  
Input capacitance  
Ci  
f = 1 MHz  
15  
25  
3