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TXS0108EPWRG4 参数 Datasheet PDF下载

TXS0108EPWRG4图片预览
型号: TXS0108EPWRG4
PDF下载: 下载PDF文件 查看货源
内容描述: 8位双向电压电平转换为漏极开路和推挽应用 [8-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS]
分类和应用: 驱动程序和接口接口集成电路光电二极管
文件页数/大小: 23 页 / 676 K
品牌: TI [ TEXAS INSTRUMENTS ]
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SCES642B – DECEMBER 2007 – REVISED SEPTEMBER 2008
8-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR
FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS
1
FEATURES
No Direction-Control Signal Needed
Max Data Rates
– 60 Mbps (Push Pull)
– 2 Mbps (Open Drain)
1.2 V to 3.6 V on A Port and 1.65 V to 5.5 V on
B Port (V
CCA
V
CCB
)
No Power-Supply Sequencing Required –
Either V
CCA
or V
CCB
Can Be Ramped First
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Protection Exceeds JESD 22 (A Port)
– 2000-V Human-Body Model (A114-B)
– 150-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
IEC 61000-4-2 ESD (B Port)
– ±8-kV Contact Discharge
– ±6-kV Air-Gap Discharge
ZXY PACKAGE
(BOTTOM VIEW)
1
D
C
B
A
2
3
4
5
TERMINAL ASSIGNMENTS
1
D
C
B
A
V
CCB
B1
A1
V
CCA
2
B2
B3
A3
A2
3
B4
B5
A5
A4
4
B6
B7
A7
A6
5
B8
GND
OE
A8
PW PACKAGE
(TOP VIEW)
A1
V
CCA
A2
A3
A4
A5
A6
A7
A8
OE
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
RGY PACKAGE
(TOP VIEW)
A1
B1
V
B2
B3
B4
B5
B6
B7
B8
GND
1
20
19
18
17
16
15
14
13
12
V
CCA
A2
A3
A4
A5
A6
A7
A8
B1
2
3
4
5
6
7
8
9
10
11
Exposed
Center
Pad
V
CCB
B2
B3
B4
B5
B6
B7
B8
The exposed center pad, if used, must be
connected as a secondary ground or left
electrically open.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007–2008, Texas Instruments Incorporated
GND
OE