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TSC2007IPWRQ1 参数 Datasheet PDF下载

TSC2007IPWRQ1图片预览
型号: TSC2007IPWRQ1
PDF下载: 下载PDF文件 查看货源
内容描述: 1.2V至3.6V , 12位,纳安级,4线微型触摸屏控制器I2Câ ?? ¢接口 [1.2V to 3.6V, 12-Bit, Nanopower, 4-Wire Micro TOUCH SCREEN CONTROLLER with I2C™ Interface]
分类和应用: 消费电路商用集成电路光电二极管控制器
文件页数/大小: 39 页 / 787 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TSC2007-Q1  
SBAS545 SEPTEMBER 2011  
www.ti.com  
INTERNAL TEMPERATURE SENSOR  
In some applications, such as battery recharging, an ambient temperature measurement is required. The  
temperature measurement technique used in the TSC2007-Q1 relies on the characteristics of a semiconductor  
junction operating at a fixed current level. The forward diode voltage (VBE) has a well-defined characteristic  
versus temperature. The ambient temperature can be predicted in applications by knowing the +25°C value of  
the VBE voltage and then monitoring the delta of that voltage as the temperature changes.  
The TSC2007-Q1 offers two modes of temperature measurement. The first mode requires calibration at a known  
temperature, but only requires a single reading to predict the ambient temperature. The TEMP1 diode, shown in  
Figure 22, is used during this measurement cycle. This voltage is typically 580mV at +25°C with a 10μA current.  
The absolute value of this diode voltage can vary by a few millivolts; the temperature coefficient (TC) of this  
voltage is very consistent at 2.1mV/°C. During the final test of the end product, the diode voltage would be  
stored at a known room temperature, in system memory, for calibration purposes by the user. The result is an  
equivalent temperature measurement resolution of 0.35°C/LSB (1LSB = 732μV with VREF = 3.0V).  
VDD  
+IN  
Converter  
-IN  
GND  
Figure 22. Functional Block Diagram of Temperature Measurement Mode  
The second mode does not require a test temperature calibration, but uses a two-measurement (differential)  
method to eliminate the need for absolute temperature calibration and for achieving 2°C/LSB accuracy. This  
mode requires a second conversion of the voltage across the TEMP2 diode with a resistance 91 times larger  
than the TEMP1 diode. The voltage difference between the first (TEMP1) and second (TEMP2) conversion is  
represented by:  
kT  
q
DV +  
@ ln(N)  
(3)  
Where:  
N = the resistance ratio = 91.  
k = Boltzmann's constant = 1.3807 × 1023 J/K (joules/kelvins).  
q = the electron charge = 1.6022 × 1019 C (coulombs).  
T = the temperature in kelvins (K).  
This method can provide a much improved absolute temperature measurement, but a lower resolution of  
1.6°C/LSB. The resulting equation to solve for T is:  
q @ DV  
k @ ln(N)  
T +  
(4)  
Where:  
ΔV = VBE (TEMP2) VBE(TEMP1) (in mV)  
T = 2.573 ΔV (in K)  
or T = 2.573 ΔV 273 (in °C)  
Temperature 1 and temperature 2 measurements have the same timing as the other data acquisition cycles  
shown in Figure 33 and Figure 34.  
16  
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Copyright © 2011, Texas Instruments Incorporated  
Product Folder Link(s): TSC2007-Q1  
 
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