TPS65142
SLVSAX5 –JULY 2011
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
VIN = 3.3 V, VS = 9V, VGH = 20 V, VBAT = 10.8V, IISET = 15µA, VIFBx = 0.5V, EN = VIN, TA = –40°C to 85°C, typical values are at
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
1.204
19.4
TYP
MAX UNIT
WLED CURRENT REGULATION
V(ISET)
K(ISET)
IFB
ISET pin voltage
1.229 1.253
1000
V
(5)
Current multiple IOUT/ISET
ISET current = 20 µA
(5)
Current accuracy
ISET current = 20 µA
ISET current = 20 µA
IFB voltage = 20 V on all pins
IFB = 450 mV
20
20.6
mA
Km
(Imax–Imin)/IAVG
1% 2.5%
3
ILKG
IFB pin leakage current
µA
I(IFB_MAX)
Current sink max output current
25
mA
WLED BOOST OUTPUT REGULATION
V(IFB_L)
V(IFB_H)
V(reg_L)
VO(step)
VO dial up threshold
Measured on V(IFB) min
Measured on V(IFB) min
400
700
16
mV
mV
V
VO dial down threshold
Minimum VO regulation voltage
VO stepping voltage
100
150
mV
WLED BOOST REGULATOR POWER SWITCH
R(PWM_SW)
I(LN_NFET)
PWM FET on-resistance
PWM FET leakage current
0.2
0.45
1
Ω
V(BL_SW) = 35 V, TA = 25°C
µA
WLED OSCILLATOR
fS
Oscillator frequency
0.9
1.0
1.2
7%
MHz
Dmax
Dmin
Maximum duty cycle of WLED Boost
Minimum duty cycle of WLED Boost
IFB = 0 V
85%
94%
CURRENT LIMIT, OVER VOLTAGE AND SHORT CIRCUIT PROTECTIONS
ILIM
N-Channel MOSFET current limit
VO overvoltage threshold
D = DMAX
1.5
38
15
3
40
A
V
V
V
VOVP
VOVP(IFB)
VSC
Measured on the VO pin
Measured on the IFBx pin
39
17
IFB overvoltage threshold
20
Short circuit detection threshold
VBAT –VO, VO ramp down
1.7
2.5
Short circuit detection delay during start
up
VSC(dly)
32
ms
THERMAL SHUTDOWN
TSD
Thermal shutdown
Thermal shutdown hysteresis
Temperature rising
150
14
°C
°C
TSDHYS
(5) Tested at TA = 25°C to 85°.
6
Submit Documentation Feedback
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s) :TPS65142
TI [ TEXAS INSTRUMENTS ]
