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SLVSAA6 – APRIL 2010
PACKAGE DISSIPATION RATINGS
(1)
PACKAGE
MSOP
(1)
THERMAL IMPEDANCE
JUNCTION TO AMBIENT
57 °C/W
Test board conditions:
A. 3 inches × 3 inches, 2 layers, thickness: 0.062 inch
B. 2-ounce copper traces located on the top and bottom of the PCB
C. 6 (13 mil diameters) THERMAL VIAS LOCATED UNDER THE DEVICE PACKAGE
ELECTRICAL CHARACTERISTICS
T
J
= –40°C to 150°C, VIN = 3.5 to 42V (unless otherwise noted)
PARAMETER
SUPPLY VOLTAGE (VIN PIN)
Operating input voltage
Internal undervoltage lockout
threshold
Shutdown supply current
Operating : nonswitching supply
current
ENABLE AND UVLO (EN PIN)
Enable threshold voltage
Input current
Hysteresis current
VOLTAGE REFERENCE
Voltage reference
HIGH-SIDE MOSFET
On-resistance
ERROR AMPLIFIER
Input current
Error amplifier transconductance (g
M
) –2
mA
< I
COMP
< 2
mA,
V
COMP
= 1 V
Error amplifier transconductance (g
M
) –2
mA
< I
COMP
< 2
mA,
V
COMP
= 1 V,
during slow start
V
VSENSE
= 0.4 V
Error amplifier dc gain
Error amplifier bandwidth
Error amplifier source/sink
COMP to switch current
transconductance
CURRENT LIMIT
Current limit threshold
THERMAL SHUTDOWN
Thermal shutdown
182
°C
VIN = 12 V, T
J
= 25°C
3.5
6.1
A
V
(COMP)
= 1 V, 100 mV overdrive
V
VSENSE
= 0.8 V
50
310
70
10,000
2700
±27
10.5
nA
mMhos
mMhos
V/V
kHz
mA
A/V
VIN = 3.5 V, BOOT-PH = 3 V
VIN = 12 V, BOOT-PH = 6 V
300
200
410
mΩ
T
J
= 25°C
0.792
0.784
0.8
0.8
0.808
0.816
V
No voltage hysteresis, rising and falling, 25°C
Enable threshold +50 mV
Enable threshold –50 mV
1.15
1.25
–3.8
–0.9
–2.9
1.36
V
mA
mA
No voltage hysteresis, rising and falling
EN = 0 V, 25°C, 3.5 V
≤
VIN
≤
42 V
VSENSE = 0.83 V, VIN = 12 V, 25°C
3.5
2.5
1.3
138
4
200
mA
42
V
V
TEST CONDITIONS
MIN
TYP
MAX
UNIT
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