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SLVS619A – NOVEMBER 2005 – REVISED FEBRUARY 2006
ELECTRICAL CHARACTERISTICS (continued)
T
J
= –40°C to 125°C, V
I
= 3 V to 6 V (unless otherwise noted)
PARAMETER
ERROR AMPLIFIER
Error amplifier open loop voltage gain
Error amplifier unity gain bandwidth
Error amplifier common-mode input
voltage range
I
IB
V
O
Input bias current, VSENSE
Output voltage slew rate (symmetric),
COMP
PWM comparator propagation delay
time, PWM comparator input to PH pin
(excluding dead time)
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
Enable hysteresis voltage, SS/ENA
Falling edge deglitch, SS/ENA
Internal slow-start time
Charge current, SS/ENA
Discharge current, SS/ENA
POWER GOOD
Power good threshold voltage
Power good hysteresis voltage
(4)
(4)
(4)
(4)
TEST CONDITIONS
1 kΩ COMP to AGND
(4)
Parallel 10 kΩ, 160 pF COMP to AGND
(4)
Powered by internal LDO
(4)
VSENSE = V
ref
MIN
90
3
0
TYP
110
5
MAX
UNIT
dB
MHz
VBIAS
60
250
V
nA
V/µs
1
1.4
PWM COMPARATOR
10 mV overdrive
(4)
70
85
ns
0.82
1.2
0.03
2.5
1.4
V
V
µs
2.6
SS/ENA = 0 V
SS/ENA = 0.2 V, V
I
= 2.7 V
VSENSE falling
3
1.5
3.35
5
2.3
90
3
35
4.1
8
4
ms
µA
mA
%V
ref
%V
ref
µs
Power good falling edge deglitch
Leakage current, PWRGD
CURRENT LIMIT
Current limit trip point
Output saturation voltage, PWRGD
I
(sink)
= 2.5 mA
V
I
= 5.5 V
V
I
= 3 V, output shorted
V
I
= 6 V, output shorted
(4)
(4)
0.18
0.3
1
V
µA
4
4.5
6.5
7.5
100
200
A
ns
ns
165
°C
°C
88
136
mΩ
Current limit leading edge blanking
time
(4)
Current limit total response time
THERMAL SHUTDOWN
Thermal shutdown trip point
OUTPUT POWER MOSFETS
r
DS(on)
Power MOSFET switches
V
I
= 6 V
V
I
= 3 V
(4)
(4)
(4)
135
150
10
59
85
Thermal shutdown hysteresis
(4)
Specified by design
4
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