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SLUS812 – FEBRUARY 2008
ELECTRICAL CHARACTERISTICS
Over recommended free-air temperature range, V
VIN
= 3.3 V,V
VLDOIN
= 1.8 V, V
REFIN
= 0.9 V, V
VOSNS
= 0.9 V, V
EN
= V
VIN
, C
OUT
= 3
×
10
µF
and circuit shown in
(unless otherwise noted)
PARAMETER
SUPPLY CURRENT
I
IN
I
IN(SDN)
I
LDOIN
I
LDOIN(SDN)
INPUT CURRENT
I
REFIN
VO OUTPUT
V
REFOUT
= 1.25 V (DDR1), I
O
= 0 A
V
VOSNS
Output DC voltage, VO
V
REFOUT
= 0.9 V (DDR2), I
O
= 0 A
V
LDOIN
= 1.5 V, V
REFOUT
= 0.75 V (DDR3), I
O
= 0 A
V
VOTOL
I
VOSRCL
I
VOSNCL
I
DSCHRG
Output voltage tolerance to
REFOUT
VO source vurrent Limit
VO sink current Limit
Discharge current, VO
–2A < I
VO
< 2A
With reference to REFOUT, V
OSNS
= 90%
×
V
REFOUT
With reference to REFOUT, V
OSNS
= 110%
×
V
REFOUT
V
REFIN
= 0 V, V
VO
= 0.3 V, V
EN
= 0 V, T
A
= 25°C
PGOOD window lower threshold with respect to REFOUT
V
TH(PG)
T
PGSTUPDLY
V
PGOODLOW
T
PBADDLY
I
PGOODLK
VO PGOOD threshold
PGOOD window upper threshold with respect to REFOUT
PGOOD hysteresis
PGOOD startup delay
Output low voltage
PGOOD bad delay
Leakage current
(1)
Startup rising edge, VOSNS within 15% of REFOUT
I
SINK
= 4 mA
VOSNS is outside of the ±20% PGOOD window
V
OSNS
= V
REFIN
(PGOOD high impedance),
PGOOD = V
IN
+ 0.2 V
0.5
REFIN rising
360
390
20
REFIN
–10 mA < I
REFOUT
< 10 mA, V
REFIN
= 1.25 V
V
REFOUTTOL
REFOUT voltage tolerance to
V
REFIN
–10 mA < I
REFOUT
< 10 mA, V
VREFIN
= 0.9 V
–10 mA < I
REFOUT
< 10 mA, V
REFIN
= 0.75V
–10 mA < I
REFOUT
< 10 mA, V
REFIN
= 0.6 V
I
REFOUTSRCL
I
REFOUTSNCL
REFOUT source current limit
REFOUT sink current limit
V
REFOUT
= 0 V
V
REFOUT
= 0 V
–15
–15
–15
–15
10
10
40
40
15
15
15
15
mA
mA
mV
10
1
–23.5%
17.5%
1.25
–15
0.9
–15
0.75
–15
–25
3
3.5
18
15
25
4.5
5.5
25
15
15
V
mV
V
mV
V
mV
mV
A
A
Ω
Input current, REFIN
V
EN
= 3.3 V
1
µA
Supply current
Shutdown current
Supply current ofVLDOIN
Shutdown current of VLDOIN
T
A
= 25
°C,
V
EN
= 3.3 V, No Load
T
A
= 25
°C,
V
EN
= 0 V, V
REFIN
= 0, No Load
T
A
= 25
°C,
V
EN
= 0 V, V
REFIN
> 0.4 V, No Load
T
A
= 25
°C,
V
EN
= 3.3 V, No Load
T
A
= 25
°C,
V
EN
= 0 V, No Load
0.7
65
200
1
0.1
1
80
400
50
50
mA
µA
µA
µA
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWERGOOD COMPARATOR
–20%
20%
5%
2
0.4
ms
V
µs
µA
–17.5%
23.5%
REFIN AND REFOUT
V
REFIN
V
REFINUVLO
V
REFINUVHYS
V
REFOUT
REFIN voltage range
REFIN undervoltage lockout
REFIN undervoltage lockout
hysteresis
REFOUT voltage
1.8
420
V
mV
mV
V
(1)
Ensured by design. Not production tested.
Copyright © 2008, Texas Instruments Incorporated
3
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