TPS51200
www.ti.com
SLUS812–FEBRUARY 2008
Design Example 7
This design example describes a 3.3-VIN, DDR3 Configuration with LFP.
R1
10 kW
TPS51200
REFIN
1
2
VIN 10
3.3 VIN
V
= V
V
= 1.5 V
= 1.5 V
VDDQ
VDDQ
R2
10 kW
C4
1000 pF
R3
100 kW
C6
4.7 mF
VLDOIN PGOOD
9
PGOOD
V
VLDOIN
C7
10 mF
C8
10 mF
3
4
5
VO
GND
EN
8
7
6
= 0.75 V
VTT
(1)
R4
C1
C2
C3
10 mF 10 mF 10 mF
PGND
SLP_S3
VTTREF
VOSNS REFOUT
C5
0.1 mF
(1)
C9
UDG-08034
Figure 31. 3.3-VIN, DDR3 Configuration with LFP
Design Example 7 List of Materials
REFERENCE
DESIGNATOR
DESCRIPTION
SPECIFICATION
PART NUMBER
MANUFACTURER
R1, R2
R3
10 kΩ
Resistor
100 kΩ
(1)
R4
C1, C2, C3
C4
10 µF, 6.3 V
1000 pF
GRM21BR70J106KE76L
Murata
C5
0.1 µF
Capacitor
C6
4.7 µF, 6.3 V
10 µF, 6.3 V
GRM21BR60J475KA11L
GRM21BR70J106KE76L
Murata
Murata
C7, C8
C9(1)
(1) The values of R4 and C9 should be chosen to reduce the parasitic effect of the trace (between VO and the output MLCCs) and the
output capacitors (ESR and ESL).
28
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