TPS51200
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SLUS812–FEBRUARY 2008
Design Example 2
This design example describes a 3.3-VIN, DDR3 Configuration
R1
10 kW
TPS51200
REFIN
1
2
VIN 10
3.3 VIN
V
= V
V
= 1.5 V
= 1.5 V
VDDQ
R2
10 kW
C4
1000 pF
R3
100 kW
C6
4.7 mF
VLDOIN PGOOD
9
PGOOD
V
VLDOIN
VDDQ
C7
10 mF
C8
10 mF
3
4
5
VO
GND
EN
8
7
6
= 0.75 V
VTT
C1
C2
C3
10 mF 10 mF 10 mF
PGND
SLP_S3
VTTREF
VOSNS REFOUT
C5
0.1 mF
UDG-08029
Figure 26. 3.3-VIN, DDR3 Configuration
Design Example 2 List of Materials
REFERENCE
DESIGNATOR
DESCRIPTION
Resistor
SPECIFICATION
PART NUMBER
MANUFACTURER
R1, R2
R3
10 kΩ
100 kΩ
C1, C2, C3
C4
10 µF, 6.3 V
1000 pF
GRM21BR70J106KE76L
Murata
C5
Capacitor
0.1 µF
C6
4.7 µF, 6.3 V
10 µF, 6.3 V
GRM21BR60J475KA11L
GRM21BR70J106KE76L
Murata
Murata
C7, C8
Copyright © 2008, Texas Instruments Incorporated
23
Product Folder Link(s): TPS51200