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TPS2148IDGNR 参数 Datasheet PDF下载

TPS2148IDGNR图片预览
型号: TPS2148IDGNR
PDF下载: 下载PDF文件 查看货源
内容描述: 模拟IC\n [Analog IC ]
分类和应用: 线性稳压器IC调节器模拟IC电源电路光电二极管输出元件
文件页数/大小: 18 页 / 252 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TPS2148  
TPS2158  
SLVS373 AUGUST 2001  
detailed description  
VIN/SWIN1  
The VIN/SWIN1 serves as the input to the internal LDO and as the input to one N-channel MOSFET. The 3.3-V  
LDO has a dropout voltage of 0.35 V and is rated for 200 mA of continuous current. The power switch is an  
N-channel MOSFET with a maximum on-state resistance of 580 mΩ. Configured as a high-side switch, the  
power switch prevents current flow from OUT to IN and IN to OUT when disabled. The power switch is rated  
at 150 mA, continuous current. VIN/SWIN1 must be connected to a voltage source for device operation.  
OUTx  
OUT1 and OUT2 are the outputs from the internal power-distribution switches.  
LDO_OUT  
LDO_OUT is the output of the internal 200-mA LDO. It is also the input to a second power switch. This power  
switch in an N-channel MOSFET with a maximum on-state resistance of 580 m. Configured as a high-side  
switch, the power switch prevents current flow from OUT to IN and IN to OUT when disabled. The power switch  
is rated at 150 mA, continuous current.  
LDO_EN  
The active high input, LDO_EN, is used to enable the internal LDO and is compatible with TTL and CMOS logic.  
enable (ENx, ENx)  
The logic enable disables the power switch. Both switches have independent enables and are compatible with  
both TTL and CMOS logic.  
current sense  
A sense FET monitors the current supplied to the load. Current is measured more efficiently by the sense FET  
than by conventional resistance methods. When an overload or short circuit is encountered, the current-sense  
circuitry sends a control signal to the driver. The driver in turn reduces the gate voltage and drives the power  
FET into its saturation region, which switches the output into a constant-current mode and holds the current  
constant while varying the voltage on the load.  
thermal sense  
A dual-threshold thermal trip is implemented to allow fully independent operation of the power distribution  
switches. In an overcurrent or short-circuit condition, the junction temperature rises. When the die temperature  
rises to approximately 120°C, the internal thermal sense circuitry determines which power switch is in an  
overcurrent condition and turns off that switch, thus isolating the fault without interrupting operation of the  
adjacent power switch. Because hysteresis is built into the thermal sense, the switch turns back on after the  
device has cooled approximately 10 degrees. The switch continues to cycle off and on until the fault is removed.  
undervoltage lockout  
Avoltagesensecircuitmonitorstheinputvoltage. Whentheinputvoltageisbelowapproximately2.5V, acontrol  
signal turns off the power switch.  
50%  
50%  
V
I(ENx)  
t
t
pd(off)  
on  
pd(on)  
t
t
off  
90%  
10%  
90%  
10%  
V
V
O(OUTx)  
t
t
f
r
90%  
10%  
90%  
10%  
O(OUTx)  
TIMING  
Figure 1. Timing and Internal Voltage Regulator Transition Waveforms  
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