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TPA2010D1YZFR 参数 Datasheet PDF下载

TPA2010D1YZFR图片预览
型号: TPA2010D1YZFR
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5W单声道无滤波器D类音频功率放大器 [2.5-W MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER]
分类和应用: 放大器功率放大器LTE
文件页数/大小: 23 页 / 592 K
品牌: TI [ TEXAS INSTRUMENTS ]
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SLOS417B – OCTOBER 2003 – REVISED JULY 2006
2.5-W MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER
FEATURES
Maximum Battery Life and Minimum Heat
– Efficiency With an 8-Ω Speaker:
88% at 400 mW
80% at 100 mW
– 2.8-mA Quiescent Current
– 0.5-µA Shutdown Current
Only Three External Components
– Optimized PWM Output Stage Eliminates
LC Output Filter
– Internally Generated 250-kHz Switching
Frequency Eliminates Capacitor and
Resistor
– Improved PSRR (–75 dB) and Wide Supply
Voltage (2.5 V to 5.5 V) Eliminates Need for
a Voltage Regulator
– Fully Differential Design Reduces RF
Rectification and Eliminates Bypass
Capacitor
– Improved CMRR Eliminates Two Input
Coupling Capacitors
Wafer Chip Scale Packaging (WCSP)
– NanoFree™ Lead-Free (YZF)
– NanoStar™ SnPb (YEF)
APPLICATIONS
Ideal for Wireless or Cellular Handsets and
PDAs
DESCRIPTION
The TPA2010D1 (sometimes referred to as
TPA2010) is a 2.5-W high efficiency filter-free
class-D audio power amplifier (class-D amp) in a
1,45 mm
×
1,45 mm wafer chip scale package
(WCSP) that requires only three external
components.
Features like 88% efficiency, –75-dB PSRR,
improved RF-rectification immunity, and 8 mm
2
total
PCB area make the TPA2010D1 (TPA2010) class-D
amp ideal for cellular handsets. A fast start-up time
of 1 ms with minimal pop makes the TPA2010D1
(TPA2010) ideal for PDA applications.
In cellular handsets, the earpiece, speaker phone,
and melody ringer can each be driven by the
TPA2010D1. The TPA2010D1 allows independent
gain while summing signals from seperate sources,
and has a low 36
µV
noise floor, A-weighted.
APPLICATION CIRCUIT
9-BALL
WAFER CHIP SCALE
YZF, YEF PACKAGES
TPA2010D1 DIMENSIONS
(TOP VIEW OF PCB)
IN+
A1
V
O-
GND
A2
PV
DD
B2
V
O-
A3
GND
B3
Internal
Oscillator
+
Differential
Input
-
R
I
IN-
_
R
I
+
IN+
PWM
H-
Bridge
To Battery
V
DD
C
S
V
O+
1,55 mm
1,40 mm
GND
Bias
Circuitry
TPA2010D1
V
DD
B1
IN-
C1
SHUTDOWN
SHUTDOWN V
O+
C2
C3
1,55 mm
1,40 mm
Note: Pin A1 is marked with a “0” for
Pb-free (YZF) and a “1” for SnPb (YEF).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NanoFree, NanoStar are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2003–2006, Texas Instruments Incorporated