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TMS320F28232PTPQ 参数 Datasheet PDF下载

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型号: TMS320F28232PTPQ
PDF下载: 下载PDF文件 查看货源
内容描述: 数字信号控制器(DSC ) [Digital Signal Controllers (DSCs)]
分类和应用: 微控制器和处理器外围集成电路数字信号处理器装置时钟
文件页数/大小: 199 页 / 2655 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TMS320F28335, TMS320F28334, TMS320F28332  
TMS320F28235, TMS320F28234, TMS320F28232  
SPRS439M JUNE 2007REVISED AUGUST 2012  
www.ti.com  
6.17 Flash Timing  
Table 6-65. Flash Endurance for A and S Temperature Material(1)  
ERASE/PROGRAM  
TEMPERATURE  
MIN  
TYP  
MAX  
UNIT  
Nf  
Flash endurance for the array (write/erase cycles)  
OTP endurance for the array (write cycles)  
0°C to 85°C (ambient)  
0°C to 85°C (ambient)  
20000  
50000  
cycles  
write  
NOTP  
1
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.  
Table 6-66. Flash Endurance for Q Temperature Material(1)  
ERASE/PROGRAM  
MIN  
TYP  
MAX  
UNIT  
TEMPERATURE  
Nf  
Flash endurance for the array (write/erase cycles)  
OTP endurance for the array (write cycles)  
–40°C to 125°C (ambient)  
–40°C to 125°C (ambient)  
20000  
50000  
cycles  
write  
NOTP  
1
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.  
Table 6-67. Flash Parameters at 150-MHz SYSCLKOUT  
TEST  
CONDITIONS  
PARAMETER  
MIN  
TYP  
MAX  
UNIT  
Program Time 16-Bit Word  
32K Sector  
50  
1000  
500  
2
μs  
ms  
ms  
s
16K Sector  
Erase Time(1) 32K Sector  
16K Sector  
2
s
(2)  
IDD3VFLP  
VDD3VFL current consumption during the Erase/Program Erase  
cycle  
75  
mA  
mA  
mA  
mA  
Program  
35  
(2)  
IDDP  
VDD current consumption during Erase/Program cycle  
VDDIO current consumption during Erase/Program cycle  
180  
20  
(2)  
IDDIOP  
(1) The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required  
prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent  
programming operations.  
(2) Typical parameters as seen at room temperature including function call overhead, with all peripherals off.  
Table 6-68. Flash/OTP Access Timing  
PARAMETER  
MIN  
37  
MAX UNIT  
ta(fp)  
Paged Flash access time  
Random Flash access time  
OTP access time  
ns  
ns  
ns  
ta(fr)  
37  
ta(OTP)  
60  
Table 6-69. Flash Data Retention Duration  
PARAMETER  
Data retention duration  
TEST CONDITIONS  
TJ = 55°C  
MIN  
15  
MAX UNIT  
tretention  
years  
182  
Electrical Specifications  
Copyright © 2007–2012, Texas Instruments Incorporated  
Submit Documentation Feedback  
Product Folder Link(s): TMS320F28335 TMS320F28334 TMS320F28332 TMS320F28235 TMS320F28234  
TMS320F28232  
 
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