SN74LVC1G00
SINGLE 2 INPUT POSITIVE NAND GATE
SCES212T − APRIL 1999 − REVISED JUNE 2005
D
Available in the Texas Instruments
D
D
D
D
D
NanoStar and NanoFree Packages
Supports 5-V V
CC
Operation
Inputs Accept Voltages to 5.5 V
Max t
pd
of 3.8 ns at 3.3 V
Low Power Consumption, 10-µA Max I
CC
±24-mA
Output Drive at 3.3 V
D
I
off
Supports Partial-Power-Down Mode
D
D
Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Protection Exceeds JESD 22
− 2000-V Human-Body Model (A114-A)
− 200-V Machine Model (A115-A)
− 1000-V Charged-Device Model (C101)
YEA, YEP, YZA,
OR YZP PACKAGE
(BOTTOM VIEW)
DBV PACKAGE
(TOP VIEW)
DCK PACKAGE
(TOP VIEW)
DRL PACKAGE
(TOP VIEW)
A
B
GND
1
5
V
CC
A
B
1
2
3
5
V
CC
A
B
GND
1
2
3
5
V
CC
Y
GND
B
A
3 4
2
1 5
Y
V
CC
2
4
GND
4
4
Y
3
Y
See mechanical drawings for dimensions.
description/ordering information
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V V
CC
operation.
The SN74LVC1G00 performs the Boolean function Y = A
•
B or Y = A + B in positive logic.
NanoStar and NanoFree package technology is a major breakthrough in IC packaging concepts, using the
die as the package.
This device is fully specified for partial-power-down applications using I
off
. The I
off
circuitry disables the outputs,
preventing damaging current backflow through the device when it is powered down.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NanoStar and NanoFree are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
2005, Texas Instruments Incorporated
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
1