LP2902-N, LP324-N
SNOSBX6C –SEPTEMBER 1999–REVISED MARCH 2013
www.ti.com
Simplified Schematic
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)
Supply Voltage
LP324-N
LP2902-N
LP324-N
LP2902-N
LP324-N
LP2902-N
32V or ± 16V
26V or ± 13V
32V
Differential Input Voltage
Input Voltage(3)
26V
−0.3V to 32V
−0.3V to 26V
Continuous
±500V
Output Short-Circuit to GND (One Amplifier)(4)
V+ ≤ 15V and TA = 25°C
ESD Susceptibility(5)
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) The input voltage is not allowed to go more than −0.3V below V− (GND) as this will turn on a parasitic transistor causing large currents
to flow through the device.
(4) Short circuits from the output to GND can cause excessive heating and eventual destruction. The maximum sourcing output current is
approximately 30 mA independent of the magnitude of V+. At values of supply voltage in excess of 15 VDC, continuous short-circuit to
GND can exceed the power dissipation ratings (particularly at elevated temperatures) and cause eventual destruction. Destructive
dissipation can result from simultaneous shorts on all amplifiers.
(5) The test circuit used consists of the human body model of 100 pF in series with 1500Ω.
2
Submit Documentation Feedback
Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LP2902-N LP324-N
TI [ TEXAS INSTRUMENTS ]
