LM185-1.2-N, LM285-1.2-N, LM385-1.2-N
SNVS742E –JANUARY 2000–REVISED APRIL 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS(1)(2)(3)
Reverse Current
Forward Current
Operating Temperature Range
LM185-1.2-N
30mA
10mA
(4)
−55°C to +125°C
−40°C to +85°C
0°C to 70°C
LM285-1.2-N
LM385-1.2-N
(5)
ESD Susceptibility
2kV
Storage Temperature
Soldering Information
TO-92 package: 10 sec.
TO package:10 sec.
SOIC and SOT-23 Pkg.
Vapor phase (60 sec.)
Infrared (15 sec.)
−55°C to +150°C
260°C
300°C
215°C
220°C
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices.
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics. The specifications
apply only for the test conditions listed.
(2) Refer to RETS185H-1.2 for military specifications.
(3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(4) For elevated temperature operation, see Table 1.
(5) The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin.
Table 1. TJ(max) for Elevated Temperature Operation
DEVICE
TJ(max) (°C)
150
LM185-1.2-N
LM285-1.2-N
LM385-1.2-N
125
100
2
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