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LM358M 参数 Datasheet PDF下载

LM358M图片预览
型号: LM358M
PDF下载: 下载PDF文件 查看货源
内容描述: LM158 / LM258 / LM358 / LM2904低功耗双运算放大器 [LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers]
分类和应用: 运算放大器放大器电路光电二极管
文件页数/大小: 33 页 / 1663 K
品牌: TI [ TEXAS INSTRUMENTS ]
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LM158-N, LM258-N, LM2904-N, LM358-N  
www.ti.com  
SNOSBT3H JANUARY 2000REVISED MARCH 2013  
ABSOLUTE MAXIMUM RATINGS(1)(2)  
LM158/LM258/LM358  
LM2904  
LM158A/LM258A/LM3  
58A  
Supply Voltage, V+  
Differential Input Voltage  
Input Voltage  
32V  
32V  
26V  
26V  
0.3V to +32V  
0.3V to +26V  
Power Dissipation(3)  
PDIP (P)  
830 mW  
550 mW  
530 mW  
435mW  
830 mW  
530 mW  
TO-99 (LMC)  
SOIC (D)  
DSBGA (YPB)  
Output Short-Circuit to GND (One  
Amplifier)(4)  
Input Current (VIN < 0.3V)(5)  
Operating Temperature Range  
LM358  
V+ 15V and TA = 25°C  
Continuous  
Continuous  
50 mA  
50 mA  
0°C to +70°C  
25°C to +85°C  
55°C to +125°C  
65°C to +150°C  
40°C to +85°C  
LM258  
LM158  
Storage Temperature Range  
Lead Temperature, PDIP (P)  
(Soldering, 10 seconds)  
Lead Temperature, TO-99 (LMC)  
(Soldering, 10 seconds)  
Soldering Information  
PDIP Package (P)  
65°C to +150°C  
260°C  
260°C  
300°C  
300°C  
Soldering (10 seconds)  
SOIC Package (D)  
260°C  
260°C  
Vapor Phase (60 seconds)  
Infrared (15 seconds)  
ESD Tolerance(6)  
215°C  
220°C  
250V  
215°C  
220°C  
250V  
(1) Refer to RETS158AX for LM158A military specifications and to RETS158X for LM158 military specifications.  
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.  
(3) For operating at high temperatures, the LM358/LM358A, LM2904 must be derated based on a +125°C maximum junction temperature  
and a thermal resistance of 120°C/W for PDIP, 182°C/W for TO-99, 189°C/W for SOIC package, and 230°C/W for DSBGA, which  
applies for the device soldered in a printed circuit board, operating in a still air ambient. The LM258/LM258A and LM158/LM158A can be  
derated based on a +150°C maximum junction temperature. The dissipation is the total of both amplifiers—use external resistors, where  
possible, to allow the amplifier to saturate or to reduce the power which is dissipated in the integrated circuit.  
(4) Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground,  
the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15V,  
continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result  
from simultaneous shorts on all amplifiers.  
(5) This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of  
the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is  
also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to  
the V+voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and  
normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than 0.3V (at 25°C).  
(6) Human body model, 1.5 kΩ in series with 100 pF.  
Copyright © 2000–2013, Texas Instruments Incorporated  
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Product Folder Links: LM158-N LM258-N LM2904-N LM358-N