SNOSBH1D – MAY 1999 – REVISED MARCH 2013
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Absolute Maximum Ratings
Supply Voltage
Differential Input Voltage
Input Voltage Range
Power Dissipation
T
j
max
θ
jA
(3)
(4)
(1) (2)
LF147
±22V
±38V
±19V
Continuous
900 mW
150°C
CDIP (J) Package
PDIP (NFF) Package
SOIC Narrow (D)
SOIC Wide (D)
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering, 10 sec.)
Soldering Information
PDIP / CDIP
SOIC Package
ESD Tolerance
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(8)
LF347B/LF347
±18V
±30V
±15V
Continuous
1000 mW
150°C
70°C/W
75°C/W
100°C/W
85°C/W
Output Short Circuit Duration
(5) (6)
See
(7)
See
(7)
−65°C≤T
A
≤150°C
260°C
Soldering (10 seconds)
Vapor Phase (60 seconds)
Infrared (15 seconds)
260°C
260°C
215°C
220°C
900V
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the
maximum junction temperature will be exceeded.
For operating at elevated temperature, these devices must be derated based on a thermal resistance of
θ
jA
.
Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the
part to operate outside ensured limits.
The LF147 is available in the military temperature range
−55°C≤T
A
≤125°C,
while the LF347B and the LF347 are available in the
commercial temperature range 0°C≤T
A
≤70°C.
Junction temperature can rise to T
j
max = 150°C.
Human body model, 1.5 kΩ in series with 100 pF.
(1) (2)
DC Electrical Characteristics
Symbol
V
OS
ΔV
OS
/Δ
T
I
OS
I
B
R
IN
(1)
(2)
(3)
Parameter
Input Offset Voltage
Average TC of Input
Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Conditions
Min
R
S
=10 kΩ, T
A
=25°C
Over Temperature
R
S
=10 kΩ
T
j
=25°C,
T
j
=25°C,
T
j
=25°C
(2) (3)
LF147
Typ
1
10
25
50
10
12
100
25
200
50
Max
5
8
Min
LF347B
Typ
3
10
25
50
10
12
100
4
200
8
Max
5
7
Min
LF347
Typ
5
10
25
50
10
12
100
4
200
8
Max
10
13
Units
mV
mV
μV/°C
pA
nA
pA
nA
Ω
Over Temperature
(2) (3)
Over Temperature
Refer to RETS147X for LF147D and LF147J military specifications.
Unless otherwise specified the specifications apply over the full temperature range and for V
S
=±20V for the LF147 and for V
S
=±15V for
the LF347B/LF347. V
OS
, I
B
, and I
OS
are measured at V
CM
=0.
The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature,
T
j
. Due to limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the
junction temperature rises above the ambient temperature as a result of internal power dissipation, P
D
. T
j
=T
A
+θ
jA
P
D
where
θ
jA
is the
thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.
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