SPECIFICATIONS: V
S
= +5V
At T
A
= +25°C, V
S
= +5V, R
L
= 10kΩ connected to V
S
/2, and Reference Pin connected to V
S
/2, unless otherwise noted.
INA132P, U
PARAMETER
OFFSET VOLTAGE
(1)
Initial
vs Temperature
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
Common-Mode Rejection
OUTPUT
Voltage, Positive
Negative
Positive
Negative
POWER SUPPLY
Rated Voltage
Voltage Range
Quiescent Current
CONDITIONS
RTO
MIN
TYP
±150
±2
0
76
(V+)–1
+0.25
(V+)–1
+0.25
MAX
±500
MIN
INA132PA, UA
TYP
V
V
V
70
V
V
V
V
MAX
±750
UNITS
µV
µV/°C
V
dB
V
V
V
V
V
V
µA
2(V+)–2
90
(V+)–0.75
+0.06
(V+)–0.8
+0.12
+5
V
V
V
V
V
V
V
V
CM
= 0V to 8V, R
S
= 0Ω
R
L
= 100kΩ
R
L
= 100kΩ
R
L
= 10kΩ
R
L
= 10kΩ
+2.7
I
O
= 0mA
±155
+36
±185
V
V
V
V
VSpecifications
the same as INA132P.
NOTE: (1) Include effects of amplifier’s input bias and offset currents.
PIN CONFIGURATION
TOP VIEW
DIP/SOIC
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V+ to V– .................................................................... 36V
Input Voltage Range ..........................................................................
±80V
Output Short-Circuit (to ground) .............................................. Continuous
Operating Temperature ................................................. –55°C to +125°C
Storage Temperature ..................................................... –55°C to +125°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s) ............................................... +300°C
Ref
1
8
No Internal Connection
–In
2
7
V+
+In
3
6
Output
ORDERING INFORMATION
PACKAGE
DRAWING
NUMBER
(1)
006
006
182
182
TEMPERATURE
RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
V–
4
5
Sense
PRODUCT
INA132PA
INA132P
INA132UA
INA132U
PACKAGE
8-Pin Plastic DIP
8-Pin Plastic DIP
SO-8 Surface-Mount
SO-8 Surface-Mount
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap-
propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
®
3
INA132
TI [ TEXAS INSTRUMENTS ]
