INA128
INA129
www.ti.com
SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005
ELECTRICAL CHARACTERISTICS (continued)
At T
A
= +25°C, V
S
=
±15V,
R
L
= 10kΩ, unless otherwise noted.
INA128P, U
INA129P. U
PARAMETER
OUTPUT
Voltage: Positive
Voltage:
Negative
Load Capacitance Stability
Short-Circuit Current
FREQUENCY RESPONSE
Bandwidth, −3dB
G=1
G = 10
G = 100
G = 1000
Slew Rate
Settling Time, 0.01%
V
O
=
±10V,
G = 10
G=1
G = 10
G = 100
G = 1000
Overload Recovery
POWER SUPPLY
Voltage Range
Current, Total
TEMPERATURE RANGE
Specification
Operating
q
JA
8-Pin DIP
SO-8 SOIC
−40
−40
80
150
+85
+125
∗
∗
∗
∗
∗
∗
°C
°C
°C/W
°C/W
V
IN
= 0V
±2.25
±15
±700
±18
±750
∗
∗
∗
∗
∗
V
µA
50% Overdrive
1.3
700
200
20
4
7
7
9
80
4
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
MHz
kHz
kHz
kHz
V/µs
µs
µs
µs
µs
µs
R
L
= 10kΩ
R
L
= 10kΩ
(V+) − 1.4
(V−) + 1.4
(V+) − 0.9
(V−) + 0.8
1000
+6/−15
∗
∗
∗
∗
∗
∗
V
V
pF
mA
INA128PA, UA
INA129PA, UA
MAX
MIN
TYP
MAX
UNIT
CONDITIONS
MIN
TYP
NOTE:
∗
Specification is same as INA128P, U or INA129P, U.
(1) Input common-mode range varies with output voltage — see typical curves.
(2) Specified by wafer test.
(3) Temperature coefficient of the 50kΩ (or 49.4kΩ) term in the gain equation.
(4) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is
±0.001%.
4
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