CD4066B
CMOS QUAD BILATERAL SWITCH
SCHS051D – NOVEMBER 1998 – REVISED SEPTEMBER 2003
electrical characteristics
LIMITS AT INDICATED TEMPERATURES
PARAMETER
TEST CONDITIONS
25°C
UNIT
V
(V)
V
DD
IN
125°C
–55°C –40°C
85°C
(V)
TYP
0.01
0.01
0.01
0.02
MAX
0.25
0.5
1
0, 5
5
0.25
0.5
1
0.25
0.5
1
7.5
15
7.5
15
0, 10
0, 15
0, 20
10
15
20
Quiescent device
current
I
µA
DD
30
30
5
5
150
150
5
Signal Inputs (V ) and Outputs (V
)
os
is
V
R
= V
,
DD
C
L
5
800
310
200
850
330
210
1200
500
1300
550
470 1050
= 10 kΩ returned
VDD VSS
On-state resistance
(max)
10
15
180
125
400
240
r
Ω
on
to
V
,
2
= V
to V
DD
300
320
is
SS
5
15
10
5
On-state resistance
difference between
any two switches
∆r
R
= 10 kΩ, V = V
DD
10
15
Ω
on
L
C
V
V
R
= V
= 5 V, V = –5 V,
SS
C
DD
= 5 V (sine wave centered on 0 V),
Total harmonic
distortion
THD
0.4
40
%
is(p-p)
= 10 kΩ, f = 1-kHz sine wave
is
L
–3-dB cutoff
frequency
(switch on)
V
C
= V
= 5 V, V
DD SS
= –5 V, V = 5 V
is(p-p)
MHz
MHz
µA
(sine wave centered on 0 V), R = 1 kΩ
L
–50-dB feedthrough
V
C
= V
= –5 V, V = 5 V
is(p-p)
SS
1
frequency (switch off) (sine wave centered on 0 V), R = 1 kΩ
L
Input/output leakage
current (switch off)
(max)
V
and
= 0 V, V = 18 V, V = 0 V;
is os
C
–5
10
I
is
18
0.1
0.1
1
1
0.1
V
C
= 0 V, V = 0 V, V = 18 V
is
os
V (A) = V
= 5 V,
= –5 V,
C
DD
SS
–50-dB crosstalk
frequency
V (B) = V
C
8
MHz
ns
V (A) = 5 V , 50-Ω source,
is
L
p-p
R
= 1 kΩ
R
= 200 kΩ, V = V
,
5
20
10
7
40
20
15
L
C
DD
Propagation delay
(signal input to
signal output)
V
V
= GND, C = 50 pF,
SS
is
L
= 10 V
10
15
t
pd
(square wave centered on 5 V),
t , t = 20 ns
r f
C
C
C
Input capacitance
Output capacitance
Feedthrough
V
DD
V
DD
V
DD
= 5 V, V = V
= –5 V
= –5 V
= –5 V
8
8
pF
pF
pF
is
C
SS
SS
SS
= 5 V, V = V
C
os
ios
= 5 V, V = V
C
0.5
4
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