CC1200
1.12 40 MHz Crystal Oscillator
T
A
= 25°C, VDD = 3.0 V if nothing else stated
Parameter
Min
Typ
Max
Unit
Condition
Note: It is recommended that the
crystal frequency is chosen so that
the RF channel(s) are >1 MHz away
from multiples of XOSC in TX and
XOSC/2 in RX
Crystal Frequency
38.4
40
MHz
Load Capacitance (C
L
)
ESR
Start-up Time
10
60
0.24
pF
Ω
ms
Simulated over operating conditions
Depends on crystal
1.13 40 MHz Clock Input (TCXO)
T
A
= 25°C, VDD = 3.0 V if nothing else stated
Parameter
Clock Frequency
Clock input amplitude (peak-to-peak)
Min
38.4
0.8
Typ
Max
40
VDD
Unit
MHz
V
Simulated over operating conditions
Condition
1.14 32 kHz Clock Input
T
A
= 25°C, VDD = 3.0 V if nothing else stated
Parameter
Clock Frequency
32 kHz Clock Input Pin Input High Voltage
32 kHz Clock Input Pin Input Low Voltage
0.8×VDD
0.2×VDD
Min
Typ
32
Max
Unit
kHz
V
V
Condition
1.15 40 kHz RC Oscillator
T
A
= 25°C, VDD = 3.0 V if nothing else stated.
Parameter
Frequency
Min
Typ
40
Max
Unit
kHz
Condition
After calibration (frequency
calibrated against the 40 MHz crystal
or TCXO)
Relative to frequency reference (i.e.
40 MHz crystal or TCXO)
Frequency Accuracy After Calibration
Initial Calibration Time
±0.1
1.32
%
ms
PRODUCTION DATA information is current as of publication date. Products conform to
specifications per the terms of Texas Instruments standard warranty. Production processing does
not necessarily include testing of all parameters.
SWRS123B – REVISED JUNE 2013
Page 13 of 23
TI [ TEXAS INSTRUMENTS ]
