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SLUS810A – SEPTEMBER 2008 – REVISED DECEMBER 2008
DISSIPATION RATINGS
PACKAGE
(1)
RGT
(1)
(2)
(2)
R
θJA
39.47 °C/W
R
θJC
2.4 °C/W
POWER RATING
T
A
≤
25°C
2.3 W
T
A
= 85°C
225mW
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at
This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. The pad is
connected to the ground plane by a 2x3 via matrix.
RECOMMENDED OPERATING CONDITIONS
MIN
IN voltage range
V
I
I
IN
I
OUT
I
BAT
I
CHG
T
J
R
ILIM
R
ISET
R
ITERM
R
TMR
(1)
(2)
IN operating voltage range
Input current, IN pin
Current, OUT pin
Current, BAT pin (Discharging)
Current, BAT pin (Charging)
Junction Temperature
Maximum input current programming resistor
Fast-charge current programming resistor
Termination current programming resistor
Timer programming resistor
(2)
MAX
26
6.4
10.2
1.5
4.5
4.5
1.5
(1)
UNIT
V
V
A
A
A
A
°C
Ω
Ω
kΩ
kΩ
4.35
’72, ’73, ‘75
‘74
4.35
4.35
–40
1100
590
0
18
125
8000
3000
15
72
The IC operational charging life is reduced to 20,000 hours, when charging at 1.5A and 125°C. The thermal regulation feature reduces
charge current if the IC’s junction temperature reaches 125°C; thus without a good thermal design the maximum programmed charge
current may not be reached.
Use a 1% tolerance resistor for R
ISET
to avoid issues with the R
ISET
short test when using the maximum charge current setting.
ELECTRICAL CHARACTERISTICS
Over junction temperature range (0°
≤
T
J
≤
125°C) and the recommended supply voltage range (unless otherwise noted)
PARAMETER
INPUT
UVLO
V
hys
V
IN(DT)
V
hys
t
DGL(PGOOD)
V
OVP
V
hys
t
DGL(OVP)
t
REC
Undervoltage lock-out
Hysteresis on UVLO
Input power detection threshold
Hysteresis on V
IN(DT)
Deglitch time, input power detected
status
Input overvoltage protection threshold
Hysteresis on OVP
V
IN
: 0 V
→
4 V
V
IN
: 4 V
→
0 V
Input power detected when V
IN
> V
BAT
+ V
IN(DT)
V
BAT
= 3.6 V, VIN: 3.5 V
→
4 V
V
BAT
= 3.6 V, V
IN
: 4 V
→
3.5 V
Time measured from V
IN
: 0 V
→
5 V 1
µs
rise-time to PGOOD = LO
(’72, ’73, ’75) V
IN
: 5 V
→
7 V
(’74) V
IN
: 5 V
→
11 V
(’72, ’73, ’75) V
IN
: 7 V
→
5V
(’74) V
IN
: 11 V
→
5 V
Input overvoltage blanking time (OVP
fault deglitch)
Input overvoltage recovery time
Time measured from V
IN
: 11 V
→
5 V with 1
µs
fall-time to PGOOD = LO
6.4
10.2
3.2
200
55
20
4
6.6
10.5
110
175
50
µs
6.8
10.8
80
3.3
3.4
300
130
V
mV
mV
mV
ms
V
mV
TEST CONDITIONS
MIN
TYP
MAX
UNIT
2
ms
ILIM, ISET SHORT CIRCUIT DETECTION (CHECKED DURING STARTUP)
I
SC
V
SC
Current source
V
IN
> UVLO and V
IN
> V
BAT
+ V
IN(DT)
V
IN
> UVLO and V
IN
> V
BAT
+ V
IN(DT)
1.3
520
mA
mV
Copyright © 2008, Texas Instruments Incorporated
3
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