SPECIFICATIONS
ELECTRICAL
(CONT)
At T
A
= –40°C to +85°C, f
S
= 800kHz, +V
DIG
= +V
ANA
= +5V, –V
ANA
= –5V, using internal reference and the 50Ω input resistor shown in Figure 4b, unless otherwise specified.
ADS7810U
PARAMETER
POWER SUPPLIES
Specified Performance
+V
DIG
= +V
ANA
–V
ANA
+I
DIG
+I
ANA
–I
ANA
Derated Performance
+V
DIG
= +V
ANA
–V
ANA
Power Dissipation
TEMPERATURE RANGE
Specified Performance
Derated Performance
Storage
Thermal Resistance (
θ
JA
)
Plastic DIP
SOIC
T
Specification same as ADS7810U.
NOTES: (1) LSB means Least Significant Bit. For the 12-bit,
±10V
input ADS7810, one LSB is 4.88mV. (2) Typical rms noise at worst case transitions and
temperatures. (3) Measured with 50Ω in series with analog input. Adjustable to zero with external potentiometer. (4) Full scale error is the worst case of –Full Scale
or +Full Scale untrimmed deviation from ideal first and last code transitions, divided by the transition voltage (not divided by the full-scale range) and includes the
effect of offset error. (5) All specifications in dB are referred to a full-scale
±10V
input. (6) Usable Bandwidth defined as Full-Scale input frequency at which Signal-
to-(Noise+Distortion) degrades to 60dB, or 10 bits of accuracy. (7) Recovers to specified performance after 2 x FS input over voltage.
CONDITIONS
MIN
TYP
MAX
MIN
ADS7810UB
TYP
MAX
UNITS
+4.75
–5.25
+5
–5
+16
+16
–13
+5
–5
225
+5.25
–4.75
T
T
T
T
T
T
T
T
T
T
T
V
V
mA
mA
mA
V
V
mW
°C
°C
°C
°C/W
°C/W
+4.5
–5.5
f
S
= 800kHz
–40
–55
–65
+5.5
–4.5
275
+85
+125
+150
T
T
T
T
T
T
T
T
T
T
T
75
75
ABSOLUTE MAXIMUM RATINGS
Analog Inputs: V
IN
..............................................................................
±25V
REF .................................... +V
ANA
+0.3V to AGND2 –0.3V
CAP ........................................... Indefinite Short to AGND2
Momentary Short to +V
ANA
Ground Voltage Differences: DGND, AGND1, AGND2 ...................
±0.3V
+V
ANA
................................................................................................... +7V
+V
DIG
to +V
ANA
................................................................................. +0.3V
+V
DIG
..................................................................................................... 7V
–V
ANA
................................................................................................... –7V
Digital Inputs ............................................................ –0.3V to +V
DIG
+0.3V
Maximum Junction Temperature ................................................... +165°C
Internal Power Dissipation ............................................................. 825mW
Lead Temperature (soldering, 10s) ................................................ +300°C
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
ORDERING/PACKAGE INFORMATION
MAXIMUM
INTEGRAL
LINEARITY
ERROR (LSB)
±1
±0.75
MINIMUM
SIGNAL-TO-
(NOISE +
DISTORTION)
RATIO (dB)
67
69
PRODUCT
ADS7810U
ADS7810UB
SPECIFICATION
TEMPERATURE
RANGE
–40°C to +85°C
–40°C to +85°C
PACKAGE
28-Pin SOIC
28-Pin SOIC
PACKAGE DRAWING
NUMBER
(1)
217
217
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book.
®
3
ADS7810
TI [ TEXAS INSTRUMENTS ]
