ABSOLUTE MAXIMUM RATINGS
(1)
V
DD
to GND ........................................................................... –0.3V to +6V
Input Current ............................................................... 100mA, Momentary
Input Current ................................................................. 10mA, Continuous
A
IN
.................................................................... GND – 0.5V to V
DD
+ 0.5V
Digital Input Voltage to GND ...................................... –0.3V to V
DD
+ 0.3V
Digital Output Voltage to GND ................................... –0.3V to V
DD
+ 0.3V
Maximum Junction Temperature ................................................... +150°C
Operating Temperature Range ......................................... –40°C to +85°C
Storage Temperature Range .......................................... –60°C to +100°C
NOTE: (1) Stresses above those listed under
Absolute Maximum Ratings
may
cause permanent damage to the device. Exposure to absolute maximum
conditions for extended periods may affect device reliability.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru-
ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
PACKAGE/ORDERING INFORMATION
For the most current package and ordering information, see
the Package Option Addendum at the end of this document,
or see the TI website at www.ti.com.
DIGITAL CHARACTERISTICS: T
MIN
to T
MAX
, V
DD
2.7V to 5.25V
PARAMETER
Digital Input/Output
Logic Family
Logic Level: V
IH
V
IL(1)
V
OH
V
OL
Input Leakage: I
IH
I
IL
Master Clock Rate: f
OSC
Master Clock Period: t
OSC
NOTE: (1) V
IL
for X
IN
is GND to GND + 0.05V.
CONDITIONS
MIN
TYP
MAX
UNITS
CMOS
0.8 • V
DD
GND
V
DD
– 0.4
GND
–10
1
200
V
DD
0.2 • V
DD
GND + 0.4
10
5
1000
V
V
V
V
µA
µA
MHz
ns
I
OH
= 1mA
I
OL
= 1mA
V
I
= V
DD
V
I
= 0
1/f
OSC
2
ADS1242, 1243
www.ti.com
SBAS235H
TI [ TEXAS INSTRUMENTS ]
