SNOSBI1B – NOVEMBER 2009 – REVISED FEBRUARY 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
TYPICAL APPLICATIONS
8080 Interface
ERROR SPECIFICATION (Includes Full-Scale, Zero Error, and Non-Linearity)
PART NUMBER
ADC0801
ADC0802
ADC0803
ADC0804
ADC0805
±1⁄2 LSB
±1 LSB
±1 LSB
FULL-SCALE
ADJUSTED
±1⁄4 LSB
±1⁄2 LSB
V
REF
/2 = 2.500 V
DC
(No Adjustments)
V
REF
/2 = No Connection
(No Adjustments)
ABSOLUTE MAXIMUM RATINGS
If Military/Aerospace specified devices are required, contact the National Semiconductor Sales Office/Distributors for
availability and specifications.
VALUE
Supply voltage (V
CC
)
(1)
Voltage
Logic control inputs
At other input and outputs
Dual-In-Line Package (plastic
Lead Temperature
(Soldering, 10 seconds)
Dual-In-Line Package (ceramic)
Surface Mount Package Vapor Phase (60 seconds)
Infrared (15 seconds)
Storage Temperature Range
Package Dissipation at T
A
= 25°C
ESD Susceptibility
(1)
(2)
2
(2)
UNIT
V
V
V
°C
°C
°C
°C
°C
mW
V
6.5
–0.3 to +18
–0.3 to (V
CC
+0.3)
260
300
215
220
–65 to +150
875
800
A zener diode exists, internally, from V
CC
to GND and has a typical breakdown voltage of 7 V
DC
.
Human body model, 100 pF discharged through a 1.5 kΩ resistor.
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