4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998
electrical characteristics at 25°C free-air temperature (unless otherwise noted)
PARAMETER
V(BR)CBO
V(BR)CEO
V(BR)EBO
IR
IIO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Input diode static reverse current
Input-to-output current
TEST CONDITIONS
IC = 100
µA,
IC = 10 mA,
IE = 100
µA,
VR = 6 V
IE = 0,
IB = 0,
IC = 0,
IF = 0
IF = 0
IF = 0
t = 8 ms
IB = 0
IB = 0,
IB = 0,
IB = 0
IB = 0,
IF = 0
0.8†
0.9†
0.7†
IB = 0 mA
1011†
10†
4†
4†
1
50
500†
500
1.5†
1.7†
1.4†
0.3†
V
V
Ω
nA
µA
mA
MIN
70†
30†
7†
10†
100
TYP
MAX
UNIT
V
V
V
µA
mA
VIO = rated peak value,
VCE = 10 V, IF = 10 mA,
VCE = 10 V,
TA = – 55°C
VCE = 10 V,
TA = 100°C
IF = 10 mA,
IF = 10 mA,
IF = 0
IF = 0,
IC = 10 mA,
TA = – 55°C
TA = 100°C
IF = 10 mA,
See Note 6
IC(on)
( )
On-state collector current
IC(off)
hFE
VF
VCE(sat)
rIO
Off-state collector current
Transistor static forward current transfer ratio
Input diode static forward voltage
Collector-emitter saturation voltage
Input-to-output internal resistance
VCE = 10 V,
VCE = 30 V,
TA = 100°C
VCE = 5 V,
IF = 10 mA
IF = 10 mA,
IF = 10 mA,
IC = 0.5 mA,
VIO = 500 V,
Cio
Input-to-output capacitance
VIO = 0,
f = 1 MHz,
See Note 6
1
2.5†
pF
† JEDEC registered data
NOTE 6: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together.
switching characteristics at 25°C free-air temperature
†
PARAMETER
ton
toff
Time-on time
Turn-off time
TEST CONDITIONS
VCC = 10 V,
RL = 100
Ω,
IC(on) = 2 mA,
See Figure 1
MIN
TYP
7
7
MAX
10
10
UNIT
µs
† JEDEC registered data
2
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