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UGF10L08GS 参数 Datasheet PDF下载

UGF10L08GS图片预览
型号: UGF10L08GS
PDF下载: 下载PDF文件 查看货源
内容描述: [10.0 Amperes Insulated Dual Series Connection Ultra Fast Recovery Rectifiers]
分类和应用:
文件页数/大小: 2 页 / 812 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号UGF10L08GS的Datasheet PDF文件第2页  
UGF10L08GS  
UGF10L08GS  
Pb Free Plating Product  
10.0 Amperes Insulated Dual Series Connection Ultra Fast Recovery Rectifiers  
Unit : inch (mm)  
ITO-220AB/TO-220F-3L  
Features  
Ultra fast soft recovery switching for high efficiency  
.189(4.8)  
.165(4.2)  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.130(3.3)  
.114(2.9)  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS and UPS  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
Car Audio Amplifiers and Sound Device Systems  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
Case: ITO-220AB full plastic isolated package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
(2.55)  
Case  
Case  
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 1.75 gram approximately  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "GD" Suffix "GS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "G" Suffix "GA"  
Positive  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
PARAMETER  
SYMBOL  
UNIT  
UGF10L08GS  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
600  
420  
600  
10  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current  
IF(AV)  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
70  
A
V
Maximum instantaneous forward voltage (Note 1)  
IF= 5 A  
VF  
1.7  
10  
TJ=25°C  
Maximum reverse current @ rated VR  
TJ=125°C  
IR  
μA  
100  
25  
Maximum reverse recovery time (Note 2)  
Typical thermal resistance  
trr  
ns  
°C/W  
°C  
RθJC  
TJ  
4.5  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: Pulse test with PW=300μs, 1% duty cycle  
Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.