SFF2001GA thru SFF2008GA
Pb
SFF2001GA thru SFF2008GA
Pb Free Plating Product
20.0 Amperes Insulated Dual Common Anode Super Fast Recovery Rectifiers
Unit : inch (mm)
ITO-220AB/TO-220F-3L
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Super fast switching for high efficiency
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.130(3.3)
.114(2.9)
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
Car Audio Amplifiers and Sound Device Systems
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
(2.55)
.1
ꢀ
ꢀ
ꢀ
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
(2.55)
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body
Mounting position: Any
Weight: 1.90 gram approximately
Doubler
Tandem Polarity Tandem Polarity
Suffix "GD" Suffix "GS"
Series
Negative
Common Cathode Common Anode
Suffix "G" Suffix "GA"
Positive
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SFF SFF SFF SFF SFF SFF
SYMBOL 2001 2002 2003 2004 2005 2006 2007 2008 UNIT
SFF
SFF
PARAMETER
GA
50
GA
100
70
GA
150
105
150
GA
200
140
200
GA
300
210
300
GA
400
280
400
GA
500
350
500
GA
600
420
600
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
V
V
V
A
35
Maximum DC blocking voltage
50
100
Maximum average forward rectified current
IF(AV)
20
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
V
Maximum instantaneous forward voltage (Note 1)
@ 10 A
VF
0.975
1.3
1.7
TJ=25°C
Maximum reverse current @ rated VR
TJ=125°C
10
IR
μA
400
35
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
trr
CJ
ns
pF
90
RθJC
TJ
2.5
°C/W
°C
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
